T72H NJSEMI | Alldatasheet

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Technical content

, li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 T72 Outline Features:

  • Interdigitated. di/namic Gate structure
  • Hard Commutation Turn-Off
  • Forward Blocking Voltage Capabilities to 800 Volts
  • Low Switching Losses at High Frequency
  • Soft Commutation (Feedback Diode) Testing Available
  • High di/dt with soft gate control

Ordering Information

Syn-.bc <i>D »D, «D, H L N Inches '' Win. 2.250 1.333 2.030 1.020 .135 .075 7.75 .040 Millimeters Max 2.290 1.343 2.090 1.060 .145 .090 8.50 Mm. 57.15 33.86 51.56 2591 3.43 1.91 196.85 1.02 Max. 58.17 34.11 53.09 26.92 3.68 2.29 215.90 T72H SERIES SCR FAST SWITCHING 475A Avg. (750 RMS) UP TO 800 VOLTS Creep Distance—1.00 in. min. (25.40 mm) (In accordance with NEMA standards.) Finish-Nickel Plate. Approx. Weight—8 oi. (221 g). 1. Dimension "H" is a clamped dimension. Applications:

  • Induction Heating
  • Transportation
  • Inverters Type Cotf* T72H Voltage VORM and VRRM (V) 100 200 300 400 500 600 700 800 Cod* 0.1 OS Current iT(av) (A) 475 Cod* Turn-off Gate current tq usec Code B IGT (ma) 150 Coda 4 '• Leads Case T72 Cod* ON Example Obtain optimum device performance for your application by selecting proper Order Code. Type T72H rated at 475 A average with VDRM = 400V Voltage Current NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Blocking St.te Maximum. | Tj -125°C> Symbol Repetitive peak forward blocking voltage , V . . vnRf\\e transient peak reverse voltage. 1 < 5.0 msec. V VRSN Reverse leakage current. mA peak 'RRM Current Conducting State Maximums (Tj = 125°C) Symbol RMS forward current. A 1-,, , Ave. forward current. A I-., , One-half cycle surge current©, A . . ' TSM 1 3t for fusing (for times > 8.3 ms) A3 sec. Pt Forward voltage oropatlTM= 15OOA andTJ = 25°C V ... V TM Min. repetitive di/dt©©© A/Msec . . . di/dt Switching (Tj = 25«C) Max turn-off time. IT = 400A. Tj = 125°C tp = 100 usec dirR/dt = 25 A/psec., reapplied dv/dt = 200V /usec. linear to 0.8 VDRM, usec. ©© "> Typ. delay time, ITM = 1000A td To = .8 VDRM©, psec Typ turn-on-time ITM vIOOOA. psec 'on Min. critical dv/dt exponential to 8 VORM. TJ = 125°C, V/psee ®© dv/dt Mm. di/dt, non-repetitive. A/psec 0©0 dt/dt Gate Maximum Parameters (Tj — 25°CI Symbol Gate voltage to trigger at Vrj — 12V. V ... VQJ Non-triggering gate voltage, Tj = 125°C, and rated VDRM. V VGDM Peak gate power. Watts PGM Average gate power. Watts pG(av) Thermal and Mechanical Symbol Min., Max. oper. junction temp., °C Tj Min., Max. storage temp., *C Tstg Thermal resistance . double- side cooling, (unction to case. "C/Watt R6JC Case to sink, lubricated. °C/Watt R gcs © Consult recommended mounting procedures. © Applies for zero or negative gate bias. 0 With recommended gate drive.

0 Higher dv/dt ratings available, consult factory

© For operation with antiparallel diode, consult factory. /I 100 200 300 400 1 100 200 300 400 1 200 300 400 500

  • < •»= I V i 35 T72H—48 750 475 8000 265,000 1 56 600 Symbol I 20 to 40 s o 3.0 o c gi 300 2 1200 I LL E 3 I s u o 500 500 600 600 • 600 ' 700 £ 00 8 00 8 00 9 DO Maximum Forward Voltage VS. Forward Current -40 to 125 o -40 to 150 2000 to 2400 T .06 .02 Ej= .02 jC ~ U i' 0 rsj 0 Tj =
  • • ' T72H _4£ s t I 0 100 1.000 10.000 :orward Current, ITM, Peak Amperes Transient Thermal mpedance VS Time
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  • ' 7T:~p.9 0001 .001 Time, t. Seconds -~*—
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