T7031 ATMEL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 16
Technical content
Features
Frequency Range 2.4 GHz to 2.5 GHz Supply Voltage 2.7 V to 3.6 V 21 dBm Linear Output Power for IEEE 802.11b Mode 3.5% EVM at 15.5 dBm Output Power for IEEE 802.11g Mode On-chip Power Detector with 20 dB Dynamic Range Power-down Mode and Biasing Control No External Components for Input Matching Low Profile Plastic Package QFN16 (4 × 4 × 0.9 mm) Benefits IEEE 802.11b WLAN IEEE 802.11g OFDM WLAN PC Cards, PCMCIA 2.4 GHz ISM Band Application Electrostatic sensitive device. Observe precautions for handling.
Description
The PA’s is designed for low current-consumption 802.11b and 802.11g multi-mode applications such as Mini-PCI and PCMCIA for portable devices. The low profile plastic package with internal input matching to 50 Ω minimizes the PCB board-space and allows simplified integration with very few passive components. The on-chip power-detector provides a voltage linear to the output power while the standby/bias control logic provides power saving and shutdown as well as a linear adjustment of output power. The P A is realized as a two stage PA with internal interstage-matching and an open-collector output structure. Process The power amplifier is designed in Atmel's Silicon-Germanium (SiGe) process and provides excellent linearity and noise performance, high gain as well as good power- added efficiency. 2.4-GHz SiGe Power Amplifier for 802.11b/g WLAN Systems T7031 Preliminary
2 T7031 [Preliminary]
Figure 1. Block Diagram
Figure 2. Pinning QFN16
1 VCC Supply voltage
2 GND Ground
3 VCTRL Power-up/biasing control voltage
4 INT_MATCH Interstage matching (must not be connected)
5 V2_PA_Out Power amplifier output and supply voltage for 2
6 V2_PA_Out Power amplifier output and supply voltage for 2 nd power amplifier stage
7 V2_PA_Out Power amplifier output and supply voltage for 2 nd power amplifier stage
8 V2_PA_Out Power amplifier output and supply voltage for 2 nd power amplifier stage
9 INT_MATCH Interstage matching (must not be connected)
10 V_DET_OUT Power detector output
11 GND Ground
12 NC Not connected
13 IN_MATCH Input matching (must not be connected)
14 PA_IN Power amplifier input
15 V1_PA Supply voltage for 1
16 V1_PA Supply voltage for 1 st power amplifier stage
4 T7031 [Preliminary]
4564F–WLAN–07/04 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage, no RF voltage applied V CC 6V Supply current I CC 200 mA Junction temperature T j 150 ° C Storage temperature T Stg -40 to +125 ° C Input RF power P IN 12 dBm Control voltage power up/down and biasing V CTRL 0 to 3 V Note: The part may not survive all maximums applied simultaneously. Thermal Resistance Parameters Symbol Value Unit Junction ambient R thJA 45 K/W Operating Range Parameters Symbol Value Unit Supply voltage range V CC 2.7 to 3.6 V Ambient temperature range T amb -30 to +80 °C
Electrical Characteristics
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1.0 Supply voltage V CC 2.7 3.3 3.6 V A
1.1 Frequency Range f 2400 2500 MHz A
1.2 Control voltage range PA operating mode V CTRL 12 V A 1.3 Power-down Mode V CTRL 0.2 V A 1.4 Current Consumption Quiescent I CQ 75 mA A
1.5 Power-down mode I PD 10 µA A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
T7031 [Preliminary] 4564F–WLAN–07/04 Electrical Characteristics - Unmodulated Carrier Test conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 2.45 GHz, Tamb = 25°C No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
2.0 Saturated output
power For reference P SAT 24 dBm A
2.1 P1dB output Power P1dB 23 dBm A
2.2 2 nd harmonic rejection POUT = 18 dBm, with external matching 2fOUT 30 dB A
2.3 Small signal gain ICQ, small signal
2.4 Reverse isolation ICQ, small signal
2.5 Input 50 Ω VSWR ICQ, small signal
condition VSWRin 2:1 C
2.6 Output 50 Ω VSWR
ICQ, small signal condition, with external matching VSWRout 2:1 C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - 11 Mbps CCK Modulation Test conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 2.45 GHz, Tamb = 25° C, IEEE 802.11b conform 11 Mbps CCK modulation with gaussian transmit filtering No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
3.0 Maximum linear
ACPR1 ≥ 33 dBc ACPR2 ≥ 55 dBc PLIN 21 dBm A
3.1 Linear power gain
POUT = PLIN ACPR1 ≥ 33 dBc ACPR2 ≥ 55 dBc GL 22 dB A
3.2 Current Consumption
POUT = PLIN ACPR1 ≥ 33 dBc ACPR2 ≥ 55 dBc ICC 130 mA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - 54 Mbps OFDM Modulation Test conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 2.45 GHz, Tamb = 25° C, IEEE 802.11g conform 54 Mbps OFDM modulation, 0.7% EVM measurement equipment noise floor included in EVM measurement result. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
4.0 Error vector
magnitude POUT = 15.5 dBm EVM 3.5 % C 4.1 Linear power gain P OUT = 15.5 dBm GL 22 dB A 4.2 Current consumption P OUT = 15.5 dBm I CC 85 mA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
6 T7031 [Preliminary]
Figure 3. Typical Gain and Current versus Control Voltage Figure 4. S-parameter, Magnitude
5.0 Detector voltage
8 T7031 [Preliminary]
Figure 7. CCK-modulation Spectrum Conforming Compliance to 802.11b Spectral Figure 8. Frequency-sweep at PIN = -1.9 dBm, VCC = 3.3 V, VCTRL = 1.56 V
10 T7031 [Preliminary]
Figure 12. VCTRL-sweep at EVM = 3.5% (EVM limit), CW-mode Figure 13. Power Detector Voltage versus POUT (Unmodulated Carrier), CW-Mode
12 T7031 [Preliminary]
Figure 16. Schematic of the Evaluation Board
Figure 17. Layout of the Evaluation Board Table 1. Bill of Materials of the Evaluation Board
14 T7031 [Preliminary]
4564F–WLAN–07/04 Evaluation Board Set-up Institutions After connection of all cables (RF and DC): V CC, V1, V2 = 3.3 V Increase V CTRL until 75 mA quiescent current is reached (VCTRL ~ 1.55 V, at frequency = 2450 MHz, PIN = -40 dBm) Unmodulated measurements: – Measure gain, P OUT, PAE, currents, VDET versus PIN, VCTRL, VCC, frequency Modulated measurements: increase input power until desired linear output power is reached; this means in case of – 11 Mbps CCK Modulation → APCR measurement: POUT ~ 21 dBm – 54 Mbps OFDM Modulation → measurement of EVM (Error Vector Magnitude): POUT ~ 15.5 dBm
T7031 [Preliminary] 4564F–WLAN–07/04
Package Information
Ordering Information
Extended Type Number Package Remarks MOQ T7031-PEP QFN16 - 4 x 4 Taped and reeled 1500 pcs. T7031-PEQ QFN16 - 4 x 4 Taped and reeled 6000 pcs. T7031-PEPM QFN16 - 4 x 4 Taped and reeled Pb free, halogen free 1500 pcs. T7031-PEQM QFN16 - 4 x 4 Taped and reeled Pb free, halogen free 6000 pcs. Demoboard-T7031 – Evaluation board 1
Printed on recycled paper. Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standar d warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibi lity for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time wi thout notice, and does not make any commitment to update the information contained her ein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel produc ts, expressly or by implication. Atmel’s products are not aut horized for use as critical components in life support devices or systems. Atmel Corporation Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza
77 Mody Road Tsimshatsui
Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Memory San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 Microcontrollers San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602
44306 Nantes Cedex 3, France
13106 Rousset Cedex, France
1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 RF/Automotive Theresienstrasse 2 Postfach 3535
74025 Heilbronn, Germany
1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123
38521 Saint-Egreve Cedex, France
www.atmel.com/literature 4564F–WLAN–07/04 © Atmel Corporation 2004 . All rights reserved. Atmel ® and combinations thereof are the registered tradem arks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others.