T7023 ATMEL | Alldatasheet
Document overview
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- PDF pages: 11
Technical content
Features
- Single 3-V Supply Voltage
- High Power-added Efficient Power Amplifier (Pout Typically 23 dBm)
- Ramp-controlled Output Power
- Current-saving Standby Mode
- Few External Components
- HP-VFQFP-N16 Package Electrostatic sensitive device. Observe precautions for handling.
Description
The T7023 is a monolithic SiGe power amplifier. It is especially designed for operation in TDMA systems like Bluetooth and WDCT. Due to the ramp-control feature and a very low quiescent current, an external switch transistor for V S is not required. Figure 1. Block Diagram
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Figure 2. Pinning HP-VFQFP-N16
1 GND Ground
2 PA_IN Power amplifier input
3 GND Ground
4 GND Ground
5 GND Ground
6 V3_PA_OUT Inductor to power supply and matching network for power amplifier output
7 V3_PA_OUT Inductor to power supply and matching network for power amplifier output
8 V3_PA_OUT Inductor to power supply and matching network for power amplifier output
9 GND Ground
10 GND Ground
11 RAMP Power ramping control input
12 GND Ground
13 V2_PA Inductor to power supply for power amplifier
14 V2_PA Inductor to power supply for power amplifier
15 GND Ground
16 V1_PA Supply voltage for power amplifier
4532B–BLURF–01/03 Absolute Maximum Ratings All voltages are referred to ground (Pins GND and slug), no RF Parameters Symbol Value Unit Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT VS 6V Junction temperature T j 150 /g176C Storage temperature T stg -40 to +125 /g176C RF input power PA P inPA 10 dBm dBm Thermal Resistance Parameters Symbol Value Unit Junction ambient HP-VFQFP-N16, Slug soldered on pcb R thJA 40 K/W Operating Range All voltages are referred to ground (Pins GND and slug). Power supply points are V1_PA, V2_PA, V3_PA_OUT. The following table represents the sum of all supply currents depending on the TX mode. Parameters Symbol Min. Typ. Max. Unit Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT VS 2.7 3.0 4.6 V Supply current I S 165 mA Standby current I S_standby 10 µA Ambient temperature T amb -25 +25 +70 /g176C
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4532B–BLURF–01/03
Electrical Characteristics
Test conditions (unless otherwise specified): VS = 3.0 V , Tamb = 25°C Parameters Test Conditions Symbol Min. Typ. Max. Unit Power Amplifier (1) Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT VS 2.7 3.0 4.6 V Supply current TX I S_TX 165 mA Standby I S_standby 10 µA Frequency range TX f 2.4 2.5 GHz Gain-control range TX /g68Gp 60 42 dB Power gain maximum TX Pin PA_IN to V3_PA_OUT Gp 28 30 33 dB Power gain minimum TX Pin PA_IN to V3_PA_OUT Gp -40 -17 dB Ramping voltage maximum TX, power gain (maximum) Pin RAMP V RAMP max 1.7 1.75 1.83 V Ramping voltage minimum TX, power gain (minimum) Pin RAMP VRAMP min 0.1 V Ramping current maximum V = 1.75 V 0.5 mA Power-added efficiency TX PAE 35 42 % Saturated output power TX, input power = 0 dBm referred to Pins V3_PA_OUT P sat 22 23 24 dBm Input matching (2) TX, Pin PA_IN Load VSWR <1.5:1 Output matching (2) TX, Pin V3_PA_OUT Load VSWR <1.5:1 Harmonics at Psat = 23 dBm TX, Pin V3_PA_OUT 2 fo -30 dBc Harmonics at Psat = 23 dBm TX, Pin V3_PA_OUT 3 fo -30 dBc Notes: 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mismatch and duration: VSWR 10:1 (all phases) 10 s, ZG = 50 /g87. 2. With external matching network, load impedance 50 /g87
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Figure 6. Output Power and PAE versus Input Power Figure 7. Pout versus Vramp and Temperature
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Figure 10. Input Circuit PA_IN/V1_PA Figure 11. Input Circuit RAMP/V1_PA Figure 12. Input Circuit V2_PA
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4532B–BLURF–01/03
Package Information
Ordering Information
Extended Type Number Package Remarks T7023-PES HP-VFQFP-N16 Tube T7023-PEQ HP-VFQFP-N16 Taped and reeled
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