T6SB SIPOWER | Alldatasheet
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© siPower TéSB (20~80) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el. 6.0A 5S Unit: mm « Var 200V~800V ouo2 . - Tune L 3020.3 Date Code(example) 3 {5 6x02 Glass passivated chip en | >| 3,620.2 High surge forward current capability ) T6SB60 0530 we [| we) Oo |g Fee. @ Applications [+ ~~ -|et i ; 25203 | I e General purpose 1 phase Bridge rectifier applications ots 4| & 10 eH 5 0.720, ESS Limiting Values (Absolute Maximum Rating) T6SB Conditions [20 |40 [60 | 80| [somerempente | | eT ato | [uioronee | fet [wwe rariwnevemoe | Yom |v | fee of ; [_wonrwasneranoc | °° | Average Rectified Output Current 50H: sine wave, R-load, 28 Without Heatsink T,=25'C st - les A . 170 urge(Non-repetitive)Forward Current 50H; sine wave, 1 cycle, T3=25°C Pt As ete a i. 120 Lewensauiim | | | tactician | Lvaningtanye | TOR fron] pacman agen || @ Electrical Characteristics (T,=25°C Unless otherwise specified) | tem ——_| symbol nit | Test Condition max _| [reacrovoaecinen | er | ¥A | vuevay.Puconeanomin Ring ctpordade |_| ‘CW “ Between junction and case, With heatsink " http://www.sipower-inc.com
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