T6KB SIPOWER | Alldatasheet
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© siPower T@KB (20~80) Power Semiconductor Technology Bridge Rectifier m Feat Outline Dimensions and Mark eatures Unit: mm el. 6.0A 4K ° oe 200V~800V Type « Class(example) ~<__*08 Date Code(example) —>j 8802 Glass passivated chi —_<_«r—re—ervvw - ass P P 7 |}—16K820 0530 e High surge forward current capability 175 3x48 ° A q 3 2 - ~ ~ + q ba @ Applications roo2 | fl A 3.3540.2 | q ¢ General purpose 1 phase Bridge — 0x02} rectifier applications tio >| iw 3 |[gse04 Ato 2 on a 5.1401! 5.140115.1401, PAU ae ae H Limiting Values (Absolute Maximum Rating) Conditions [20 |40 [60 | 80] A |sore si With Heatsink T =110°C | so | Average Rectified Output Current Reload sine wave 28 : Without Heatsink T.=25'C| ° . lesm A . an 175 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, T=25°C Pt | a's | sn¢<t<8.3ms Ti<25°C Rating of per diode 127 Current Squared Time Apsems Treo Rating of Dielectric Strength Terminals to case, AC 1 minute @ Electrical Characteristics (T,=25°C Unless otherwise specified) Faxromecving | "| | nea Auamanm tga |"? | Peak Forward Voltage le=6.0A, Pulse measurement, Rating of per diode Row ‘cw a , . 4 Thermal Resistance Ht Between junction and lead, Without heatsink http://www.sipower-inc.com
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0 [TTT IN 80 90 100 110 120 130 140 150 lo-To Curve Tol) http://www.sipower-inc.com