T6401 NJSEMI | Alldatasheet

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'Jsuzu <^E.mi-L.onauctoi ^Pioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 T6401, T6411, T6421 Series 30-A Silicon Triacs For Power-Switching and Power Control Feature!: 800V, 125 Deg. C Tj Operating High dv/dt and dl/dt Capability Low Switching Losses High Pulse Current Capability Low Forward and Reverse Leakage Sipos Oxide Glass Multilayer Passivation System Advanced UnisurfaCQ Construction Precise Ion Implanted Dilluslon Source TERMINAL DESIGNATIONS PRESS-FIT TYPES STUD TYPES ISOLATED-STUD TYPES T6401 SERIES T6411 SERIES T6421 SERIES REPETITIVE PEAK OFF-STATE VOLTAGE:' Gale open, Tj - -50 to 125° C RMS ON-STATE CURRENT (Conduction angle - 360°): Case temperature Tc = 80° C (Press-fit types) ' 85« C (Stud types)

  • 80° C (Isolated-stud types) For other conditions ,,.,,. PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: For one cycle of applied principal voltage

60 Hz (sinusoidal)

50 Hz (sinusoidal)

For more than one cycle of applied principal voltage RATE-OF-CHANGE OF ON-STATE CURRENT: VOM = VOBOM. IOT = 200 mA. t, - 0.1 /« (See Fig. 13) FUSING CURRENT (lor trite protection): Tj = -40 to 100° C. I * 1.25 to 10 ms PEAK GATE-TRIGGER CURRENT:1 For 1 ps max.. See Fig. 7 GATE POWER DISSIPATION PEAK (For 1 fis max,. IQTW < 4 A, See Fig. 7) AVERAGE TEMPERATURE RANGE:* Storage Operating (Case) TERMINAL TEMPERATURE (During soldering): For 10 s max. (terminals and case) STUD TORQUE: Recommended , Maximum (DO NOT EXCEED) T6401B T6411B T6421B 200 T6401D T6411D T6421D 400 T6401M T6401N T6411M T6411N TB421M — di/dt I't 'GTM TC Tr "For either polarity of ma

  • For either polarity to gat AFor temperature measureme ain terminal 2 voltage (VMT?) with reference to main terminal 1. te voltage (VG) with reference to main terminal 1, rement reference point, see Dimensional Outline. See Fig. 3 , . 300 - . 265. . See Fig. 4 100 450 ~_ . 0.75 - . -65 to 150 . . -65 to 100 . -226 . -35- . 50- A's A W W in-lb in-lb NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

T6401, T6411, T6421 Series ELECTRICAL CHARACTERISTICS, At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperature CHARACTERISTIC SYMBOL Peak Off-Slate Current:* Gate open, Tj = i25°C. VOHOM= Max. rated value IOHOM Maximum On-Stale Voltage:* Fori,= 100 A (peak),TG*25°C V™ DC Holding Current:* Gate open, Initial principal current = 150 mA (DC), v0 = 12V: TC=25°C IHO For other case temperatures Critical Rate-of-Rise of Commutation Voltage:* For VD = Venom I TCHMSI = 30 A, commulating di/dt - 16 A/ms, gate unsnergized (See Fig. 14): = 85° C (Stud types) dv/dt = 80° C (Isolated-stud types) Critical Rate-of-Rlse of Off-State Voltage:* For VD - VDnoM, exponential voltage rise, gate open, TC = 125°C; T6401B, T6411B, T6421B T6401D, T6411D, T6421D ... dv/dt T6401M.T6411M, T6421M T6401N T6411N DC Gate-Trigger Current:*1 Mode VMT2 V0 For VD" 12 V (DC), l+ positive positive RL = 30n, 111- negative negative TC=25°C I" positive negative IGT III* negative positive DC Gate-Trigger Voltage:** ForvD = 12V(DC), Rt = 30 O, TC=25°C ,, For other case temperatures Forvo = VUTOM. RL= 125 n, Tc = 100" C Gale-Controlled Turn-On Time: (Delay Time • Rise Time) Forv0= VOROU, lot = 200mA, t,= 0.1 v$. ir* 45 A (peak) Tc = 25°C (See Figs 7 & 12) . t,, Thermal Resistance, Junctlon-to-Case: Steady-State Press-lit types , Transient (Press-fit & stud types) Thermal Resistance, Juncllon-to-Hex (Stud, See Dim. Outline): LIMITS For All Types Unless Otherwise Specified Mln. Si 0.2 Typ. 0.2 2.1 See Fig. 6 200 150 100 e Figs, 8 ( 1.35 See Fig. 1 1.7 See Fig. 2 Max. 2.5 !c9 2.5 J 0.8 0.9 UNITS mA V mA V///S V/fjs mA V °C/W

  • For either polarity of main terminal 2 voltage (VUu) with reference to main terminal 1.
  • For either polarity of gate voltage (Vo) with reference 10 main terminal 1.