T627 NJSEMI | Alldatasheet

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Technical content

, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. T62 Outline Features:

  • Center fired di/namic gate
  • High di/dt with soft gate control
  • High frequency operation
  • Sinusoidal waveform operation to 20 KHz
  • Rectangular waveform operation to 20 KHz
  • Low dynamic forward voltage drop
  • Low switching losses at high frequency Symbc «D, <t>D, H L N Inches Mm. 1.610 .745 1.420 500 .135 .072 7.75 .030 Millimeters Max. 1.650 .755 1.460 .560 .145 082 850 Mm. 4089 18.92 36.07 12.70 3.43 1 83 19685 Max 41.91 19.18 37.08 14.22 368 208 215.90 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 T627 SERIES SCR FAST SWITCHING 150A Avg up to 1200 Volts Creep Distance—.34 in. min. (8,64 mm). (In accordance with NEMA standards.) Finish- Nickel Plate. 1. Dimension "H" is clamped dimension. Applications:
  • Inverters for Dps Induction Heating Motor Control
  • Choppers
  • Crowbars

Ordering Information

Obtain optimum device performance for your application by selecting proper Order Code. Type T627 rated at loOA average with VQRM — 1000V, IGT ^ 150 ma.tq — ao^sec max. and flex leads —order as: "for 10/Jsec turn-off, NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or'eoing to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before-placing orders. Quality Semi-Conductors

Blocking Stata Maximum* CD (Tj l25°Cii Repetitive peak forward blocking voltage . V Repetitive peak reverse voltage , V Non-repetitive transient peak reverse voltage, t < 5.0 msec, V Forward leakage current, mA peak Reverse leakage current, mA peak 1 2t for fusing (for times > 8.3 ms) A3 sec. " Forward voltage drop at and Tj =^ 25°C, V . . I =625A Min. repetitive di/dt®, A/«sec©©© Symbol VDRM VRRM VRSM 'DRM 'RRM 100 100 200 200 200 300 300 300 400 400 400 500 500 500 600 600 600 700 700 700 800 800 800 900 900 900 1000 1000 1000 1100 1100 1100 1200 1200 1200 1300 - 25- Current Conducting State Maximums (Tj = 125-C) RMS forward current, A Ave. forward current, A One-half cycle surge current®, A . . Symbol 'T(rms) !T(av) T627 235 150 3500 Pt . VTM di/dt 50.000 2.35 200 Switching (Tj = 25"C) Max. turn-off time, IT - 1 50 A, Tj = 125°C. diR/dt - 12:5 CD A/^sec, reapplied dv/dt - 20V/^sec .@ linear to 08 VrjRM /z sec • Typ. turn-on-time, IT -:: 1 OOA VD= 100V®, usec . . Min. critical dv/dt. exponential to VnpM. Tj = 125°C. V/^sec©® Min. di/dt A//isec 00© Symbol ton dv/dt di/dt 1 0 to 50 3.5 300 800 Gate Maximum Parameters (Tj - 25°C) Gate current to trigger at Vp 3_ 12V, mA Gate voltage to trigger at VQ — 12V, V ... Non triggering gate voltage, Tj — 125°C, and rated VQ^^, V ... Peak forward gate current. A Peak reverse gate voltage, V Peak gate power. Watts Average gate power, Watts Symbol 'GT VGT VGDM I GTM VGRM PGM PGIavl 150 0.15 Thermal and Mechanical o Maximum Forward Voltage VS Forward Current 10 100 1000 Forward Current, ITM, Peak Amperes Transient Thermal Impedance vs. Time 10.000 bymbol Min., Max. oper. junction temp , CC Tj Min., Max. storage temp., °C Tstg Min., Max Mounting Force, lb.0 Max. thermal resistance. Double side cooled Junction to case. °C/Watt ^9JC Case to sink, lubricated, °C/Watt R grjs G Consult recommended mounting procedures CD Applies for zero or negative gate bias. CD Per JEDEC RS-397, 5.2.2.1 0 Withjrecommended gate drive.

0 Higher dv/dt" ratings available, consult factory

© Per JEDEC standard RS-397. 5.2.2.6 © For operation with antiparallel diode, consult factory iS ob § i. JM 00 g 0 C o o c fct:8SS Vlaximum Thermal Impedance Junctio Z8jc(t|.1C/Watt o o oD ro X <J> 05 1 1 1 i GOT ; i !*' h rtti i . it 1 ' . | i r^ Zi 01 .1 ft c .'1 i ' : -.'" \\J$ Zp bla- Skied Q ; iii'l :ooiin$|; ! 1 (' i ' II Mil 10C Time, t. Seconds