T5SB SIPOWER | Alldatasheet
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© siPower T5SB (20~80) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el. 6.0A 58 Unit: mm « VarM 200V~800V oso Glass passivated chip Type « Class(example) 5020.3 _ Pate Covelexample) ma 3,620.2 e High surge forward current capability a J ~TSSB60 0530 a 8 $ 3 @ Applications 2610.2 Le vj =y i | © General purpose 1 phase Bridge a2e0.2 a on 22802, )| «- at 2702| | rectifier applications os ig i rae | ~e oso 100.2 17.5202" 7.5202) ' eS: Limiting Values (Absolute Maximum Rating) T5SBA Unit Conditions [20 [40 [60 | 80/ lumicotenpene | © [et A With Heatsink T.=110°C | eo | Average Rectified Output Current 50Hz sine wave, R-load, 28 Without Heatsink T.=25'C| : - lesm | A ‘ conic 170 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, T=25°C Pt | AS | ims<t<8.3ms Tj=25'C Rating of per diode 120 Current Squared Time Sms TF29 © Rating of per ai @ Electrical Characteristics (T,=25'C Unless otherwise specified) Row cw a , . 5 Thermal Resistance faa Between junction and lead, Without heatsink http://www.sipower-inc.com
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