T4UB SIPOWER | Alldatasheet
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© siPower TAUB (20~80) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el. 4.0A 2U Unit: mm Date Code(example © Vari 200v~800V Te Gssivamge) pinnae «Glass passivated chip 2s . : e High surge forward current capability T4UB80 0530 4g e Small size ol Slee —s gy a8 - ae y. a 4 . | tee @ Applications : q © General purpose 1 phase Bridge | | 3 rectifier applications ol " | rhasoe oye 07604 |i mg Limiting Values (Absolute Maximum Rating) T4UB Conditions | 20 | 40 | 60 | 80 | T c +150 Junction Temperature Average Rectified Output Current 60Hz sine wave 40 R-load, With heatsink T.=140°C i Pe) As | oms<t<8.3me 7}=25°C Rating of per diod ~ Current Squared Time MSSESS Sms TF29 © Rating of per doce Dielectric Strength Terminals to case. AC 1 minute kg* m Electrical Characteristics (T,=25'C Unless otherwise specified) | sreenprctinensanton vinounesn | | http://www.sipower-inc.com
© siPower T4UB (20~80) Power Semiconductor Technology Bridge Rectifier @ Characteristics(Typical) 3° ee i” / 8 ; Pe ’ FEE EE ew feed ee eee eee PET ETAT TT FS SO 0.5 I a ZL LTT TTT ye | Li] 3 f Ve (VD lo (AD Forward Characteristics . P-lo Curve ° 2 | TI sine wave 4 20 CTT < < ‘on glass-epoxy substrate pod VN |S EEREEEE Se eo cycle 120 <a ; a aaal " Tomrepentve EEA EEE soldering land 3mm
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iz } Y With heatsink FAI 0 ar ane 0 20 : 40 60 80 100 120 140 160 Toe (CO) lo-Tc Curve ° http://www.sipower-inc.com