T4SB SIPOWER | Alldatasheet
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© siPower TASB (20~80) Power Semiconductor Technology Bridge Rectifier Outline Dimensions and Mark @ Features 38 Unit: mm el. 4.0A ° Var 200V~800V as103 pa cttoamele) > Kee Glass passivated chip Type . Class(example) (—__ 36102 e High surge forward current capability T4SB60 0530 i} as 3x45 & o Pye a . ao @ Applications Foe ea 2n02|' |p —* - ze « General purpose 1 phase Bridge oe. : H x ees rectifier applications ~ | 92): 3 ror | | l 3 3 ors0t |] Limiting Values (Absolute Maximum Rating) T4SB Symbot Unit [20 an [600] loungetempente | ™ |e | | ot Luniontonpontre | fe] [nepsiePeacReversevatage | You | v | one Average Rectified Output Current 50Hz sine wave, R-load 23 Without Heatsink T.=25°C| ° . lesm | A a cone 150 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, Ts=25°C rt As _ Onn Rati 93 Current Squared Time 4ms<t<8.3ms Tj=25'C Rating of per diode Mounting Torque Recommend torque: 5kg *cm Los | @ Electrical Characteristics (T,=25'C Unless otherwise specified) Jesarravene caren | | +A | vagy Puce reinent Raingofperdids, | "| Thermal Resistance cw Between junction and lead, Without heatsink los | http://www.sipower-inc.com
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