T4700 NJSEMI | Alldatasheet

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^zmi-Conductoi Lpioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 T4700 Series 15-Ampere Silicon Triacs For Phase-Control and Load-Switching Applications Features:

  • 800V. 125 Deg. C Tj Operating
  • High dv/dt and di/dt Capability » Low Switching Losses
  • High Pulse Current Capability
  • Low Forward and Reverse Leakage
  • Sipos Oxide Glass Multilayer Passivation System
  • Advanced Unisurtace Construction
  • Precise Ion Implanted Diflusion Source TERMINAL DESIGNATIONS JEDECTO-213AA REPETITIVE PEAK OFF-STATE VOLTAGE:" Gate Open .. .• RMS ON-STATE CURRENT: Tc « 95° C, conduction angle = 360° PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: For one full cycle of applied principal voltage

60 Hz (sinusoidal)

For one full cycle of applied principal voltage (SO-Hz, sinusoidal) For more than one full cycle of applied voltage PEAK GATE-TRIGGER CURRENT: For 1 fjs max FUSING CURRENT (fortriac protection): Tj=-40to100°C, t= 1.25 to 10ms GATE POWER DISSIPATION: Peak* (for 1 us max. and IQTU = < 4 A) Average (averaging time = 10 ms max.) TEMPERATURE RANGE:A Storage Operating (Case) PIN TEMPERATURE (During soldering): At distances > 1/32 in. (0.8 mm) from seating plane for 10 s max. T4700B T4700D T4700M T4700N Vonou ITIBMSI ITSM 200 Pou PG;AVI T,,, Tc

  • For either polarity of main terminal 2 voltage (VMTj) with reference to main terminal 1.
  • For either polarity of gate voltage (V0) with reference to main terminal 1. ±For temperature measurement reference point, see Dimensional Outline. 400 600 800 . 100. See Fig. 3 . .50. _ 16- _ 0.45 - . -4010150 . . -4010125 . .225. V A A A A A;s W W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS

At Maximum Ratings and at Indicated Case Temperature (Tc) Unless Otherwise Specllled CHARACTERISTIC SYMBOL LIMITS For AM Types Unless Otherwise Specllled Min. Typ. Max. UNITS Peak Otf-State Current* Gala open, Tj = 125"C, VDROM = Max. rated value 0.2 mA Instantaneous On-State Voltage* For ir = 30A (peak), Tc 25°C DC Holding Current* Gate open, Initial principal current = 150 mA (DC), VD = 12V: Tc = 25°C For other case temperatures Critical Rate of Applied Commutating Voltage* For V0 = VonoM, IT(F1MS) = 15 A, commutating di/dt = 8 A/ms. and gate unenergized At Tc = +95° C Critical Rate of Rise of Off-State Voltage* For VD = VOBOM, exponential voltage rise, and gate open AtTG = 125eC T4700B T4700D T4700M T4700N DC Gate-Trigger Current* • For vD = 6 volts (dc), RL = 12 ohms, Tc = +25°, and Specified Triggering Mode: I* Mode: VT2 is positive, VG is positive I" Mode: VT2 is positive, VG is negative lll+ Mode: VT2 is negative, VG is positive Ill- Mode: VT2 is negative, VG is negative For other case temperatures DC Gate-Trigger Voltage* * Forv0 = 6 volts (dc) and RL = 12 ohms At Tc = +25" For other case temperatures Forv0 = VPROM, RL=125n. Tc = 12S°C Gate-Controlled Turn-On Time (Delay Time + Rise Time) For VD = VOROU, I0 = 160 mA, tr = 0.1 fa, IT = 25 A (peak), Tc = 25°C Thermal Resistance: Junction-to-Case 1.6 2.0 15 60 See Fig. 5 mA dv/dt V//is dv/dt 150 100 IGT See Figs. 7 & 9 mA VOT 2.5 0.2 See Fig. 11 1.6 2.5 1.3 °C/W

  • For either polarity of main terminal 2 voltage (VI2) with reference to main terminal 1.
  • For either polarity of gate voltage (V0) with reference to main terminal 1.