T3UBHF SIPOWER | Alldatasheet
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© siPower T3UB (20~80)HF Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el. 3.0A 2U Unit: mm e Varm 200V~800V ‘Type _. Class(example) Date Code(example) 3.1202 ———— 13.8502 aa Glass passivated chip sso e High surge forward current capability T3UB80F fa [ e Small size ua leo h an 732)—-O | e Halogen Free product g 2 i 0530 J = @ Applications = | | 2 « General purpose 1 phase Bridge . q q l 3i02 rectifier applications Fl 1 “| 076201 hn Limiting Values (Absolute Maximum Rating) Conditions | 20F | 40F | 60F | 80F | Ty c +150 Junction Temperature s Average Rectified Output Current 60H sine wave, R-load, 30 With heatsink T.=140°C . urrent Pe) As | ams<t<s.3ms Tj=28'C Rating of per diode 36 Current Squared Time / @ Electrical Characteristics (T,=25°C Unless otherwise specified) http://www.sipower-inc.com
© siPower 13UB (20-20)HF Power Semiconductor Technology Bridge Rectifier ™@ = Characteristics(Typical) 3° AE, i" /, a 8 a Va o ee ee ee 1 tt es EEEEE ERS FERRERS) 5 FEEL LY
1 SC GS GC CC
el Ltt | | LF | es ed PEELE 2 a Sine wave,R-load | per one diode 4 4 ' [| rT 0 05 1.0 15 0 0.6 1.2 18 24 3 Ve (V) To (AD Forward Characteristics . P-lo Curve ° 3 120 LOU sine wave 2 EEE crassecponycutarate | 3 100 SE IVY 2 CrTrrrry | + '8.3m|8.3m, rrr i PC.B. So Bae ee Oo st | ene r = TNA TT 9 soldering land 3mm wo UE re FEN eis <H a ao LE ET PA Pew Lf tT TTT SSO [or il 8 soot | FERS HEH incor |S EEEEF PSS 4 2 5 10 20 50 100 0 40 80 120 160 Ta CC) ‘Surge Forward Current Capability Number of Cycles lo-Ta Curve 260 _ Hi ER HH wort Tt tT tT tt ty oe SEE EEEEEEEEH ° z ~ EEE § SE SCORE EEEECEE COG gS piety yyy yg er a 20FT TTT TPT TT) 8 40) —2ms t+] S iol | rg LB 2) 8ms SE egtsgk TE) 100) sms Se] od A Wr CA} ol [of | eer sinowveriood | TY) gol TT TP TP PP crm) PO See 0 0 0 20 40 60 80 100 120 140 160 oO 10 20 30 40 50 60 70 80 90 100110120
1 Temperature(‘C)
lo-Tc Curve Maxinmum Non-Repetitive Peak Forward Surge Current http://www.sipower-inc.com