T3SBA SIPOWER | Alldatasheet
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© siPower T3SBA (20~80) Power Semiconductor Technology Bridge Rectifier Outline Dimensions and Mark M@ Features 4 oa Unit: mm el, 3S o Var 200V~800V 2520.3 Date Code(example) > aso? «Glass passivated chip Type . Class(example) © f of pbe02 e High surge forward current capability T3SBA60 0530 i} ac
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Foo 8 —h oag @ Applications : : 2740.2 ; 1.25103 j eel e General purpose 1 phase Bridge 490217 IM ool! A rectifier applications q 4 Zs orto. 1,080.1 q q 3) g = Limiting Values (Absolute Maximum Rating) T3SBA Symbot Unit [20 an [0 [0] lungetengnore | [ef to luuniontongeure | Mf ef | epee Peat Rava tage | Yow |v [| oc Average Rectified Output Current 50H2 sine wave, R-load 23 Without Heatsink T.=25°C| ° Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, Ta=25°C | = | rt As _ Onn Rati 27 Current Squared Time 4ms<t<8.3ms Tj=25'C Rating of per diode Mounting Torque Recommend torque: 5kg *cm Los | @ Electrical Characteristics (T,=25'C Unless otherwise specified) leeacrovenecunen| et | #4 | vaevaq. Puke messvenent Ratngefpercode, | "| Thermal Resistance cw Between junction and lead, Without heatsink los | http://www.sipower-inc.com
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