T3SB SIPOWER | Alldatasheet
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© siPower T3SB (20~80) Power Semiconductor Technology Bridge Rectifier Outline Dimensions and Mark M@ Features 4.0A Unit: mm el, 3S Varn 200V~800V 25203 Date Code(example) ete . . Type . Class(example) j<___*_ ate Covie(exampie) >| 3,640.2 Glass passivated chip s K . a T3SB60 0530 a5 i High surge forward current capability 3K45° 37 rized _ © q sO) [poset | ong @ Applications 1.2540.3 Hi i a e General purpose 1 phase Bridge 1,920.2, | q a 5 ti >|} az22|' 9 rectifier applications i Z| o7s0.1 1.040.4 4 3] 1080.1, | 4 Fi q v Limiting Values (Absolute Maximum Rating) T3SB [Symbol Unit Conditions [20 40 [60 | 80 | Average Rectified Output Current 50Hz sine wave, R-load 23 Without Heatsink T.=25'C| : on lesm A ‘ - 120 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, T3=25°C Pt | A'S | sms<t<8.3ms T)=25'C Rating of per diod Current Squared Time satse ome T2010 Rating of per diode @ Electrical Characteristics (T,=25'C Unless otherwise specified) http://www.sipower-inc.com
© siPower 138B (20-80) Power Semiconductor Technology Bridge Rectifier @ Characteristics(Typical) —— zZ 14 9 eS Seber et ee nay ae pe A OS SERRE LZ = 8 7 A seers Saeed de i | os- ltr ryt yr yr rr 7 8 ee 7, eee HEH PAA off stn] SA ene . LZ. Ta=150°C we L LAL AHHH 04 05 06 O7 O08 O9 1 #11 «1.2 0 1 2 3 4 5 6 7 Vp (V) lo (AD Forward Characteristics Plo Curve
160 CT sine wave | 28 a
a COT st me onaecc epost suvsrte < 140 2 ze oa) TTT < manne < 24 = 400 CLO omg joms o Fae (0 | eos 2 2ST ‘yete ~ 20 a C8, ~ SS N Gor YL ‘00 ee ao | ING op Ame LCCCCN
80 Coons \\ | soldering land 5mm —
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40 Co ar os FE NEE
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0 a 0 FL_ELLELEN 1 2 5 10 20 50 100 0 40 80 120 160 " Number of Cycles Ta CO) Surge Forward Current Capability lo-Ta Curve 5.0 "Oo a Te
2 FT i=
2 ETT TEN TI aa
so ETN | 2.0 , (eer ON With heatsink
0 PTT TEN |
90 100 110 120 130 140 150 160 Te (OD lo-Te Curve http://www.sipower-inc.com