T2SBAF SIPOWER | Alldatasheet
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© siPower 1288 (20-80)AF Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el, 4.0A 2s Unit: mm ° VarM 200-800V «Glass passivated chip e High surge forward current capability 2080.3 Date Code(examgle) ie ate Codeterarele) e Small size Tee ce IO v. e HF product y ~ T2SBe0AF,” . t+ o~ ew = : 25x45" « t > @ Applications face | Pe oe wee General purpose 1 phase Bridge soso i g5e0-t 08 s rectifier applications —* ‘| 5£0.1 540.1 5404 ee Limiting Values (Absolute Maximum Rating) jsowmoae | |e] | ee jantomoonm | © [ef] | Junction Temperature Frensessiomcomt | * |*|sieamonresreoc | * | [smowneamnrowccne| | |mesmernrec| | Pt As ms<t<8.3ms T}=25'C Rating of pet ‘Current Squared Time diode @ Electrical Characteristics (T,=25°C Unless otherwise specified) Thermal Resistance cw Row Between junction and lead http://www.sipower-inc.com
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