T2SBA SIPOWER | Alldatasheet
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© siPower T2SB (20~80)A Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el, 4.0A Unit: mm @ Ver 200V~800V 2s . . 3540.2 «Glass passivated chip Type .Class(example) 2020.3 = Code(example) e High surge forward current capability SK « Small size ” T2SB60A’ A _28%45°/ 0530 a @ Applications tow ow fee General purpose 1 phase Bridge 2505 j i) 10202, rectifier applications A503 HI | H 3 ostos 1.080.1 q 3 oso | 2 q ¥ H Limiting Values (Absolute Maximum Rating) '2SB20A|T2SB40A| T2SB60AT2SB80A Symbol re oe ee es T c +150 Junction Temperature Repetitive Peak Reverse Voltage ven fv | | a0 | 0 | 00 | ao | Average Rectified Output A | sorpsine wave, Reload, T.=25 4.0 Current c 2 7 ve Surge(Non-repetitive)Forward Irsu | A | 50Hzsine wave, 1 cycle, T=25 150 Current c rt A’s_ | 1ms<t<8.3ms T)=25'C Rating of per 93 Current Squared Time diode @ Electrical Characteristics (T,=25°C Unless otherwise specified) | um | Symbol ne Test Condition me | leu=2A, Pulse measurement, Rating of per diode Thermal Resistance cw Rew Between junction and lead http://www.sipower-inc.com
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