T2SB SIPOWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
© siPower T2SB (20~80) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el, 2.0A Unit: mm @ Ver 200V~800V 2s i i 3.5102 . Glass passivated chip 7 Type .Class(example) 2020.3 = Code(example) e High surge forward current capability SK Small size 728860 / 28xa5*/ 0530 ” ail @ Applications tow ow fee General purpose 1 phase Bridge 2505 j i) 10202, rectifier applications A503 HI | H 3 0.50.1
1.030.1 H 3
10804 | 2 | y H Limiting Values (Absolute Maximum Rating) T2SB20 | T2SB40 | T2SB60 | T2SB80 Symbol re oe ee es T c +150 Junction Temperature Repetitive Peak Reverse Voltage ven fv | | a0 | 0 | 00 | ao | [avsseerett ououcuren| ® | A | siesmwmm.ninerase | 2? | Surge(Non-repetitive)Forward lesm A | cons sine wave, 1 oyole, T.=25'C Current i _ A’s | 1ms<t<8.3ms Tj=25'C Rating of per 34 Current Squared Time diode @ Electrical Characteristics (T,=25'C Unless otherwise specified) Peak Forward Votage eee gegen Thermal Resistance cw Rew Between junction and lead http://www.sipower-inc.com
© siPower T2SB (20~80) Power Semiconductor Technology Bridge Rectifier @ Characteristics(Typical) = 3.6
0 PERE ESSE ae s aaa
2 | > 3.2 /. sor tf TT PT VT Beacy 4e/ Aen oes eee RUsnancy 407 Geese ee YL fae [fe
1 ES SS wt tt AT
0.8 s “Pte “ ee oa LLL ELLE L ZT 04 05 06 O7 08 09 1 11 1.2 0 1 2 Ve (V) lo (AD Forward Characteristics P-lo Curve 100 7 a < iH 7 ~ ate pw HOON 2 DN i Ee Ph NC Goal asi | Seana) 2 oo Fa eS TTT AG coreg ond an CCI SS LTT TTT TEN PT COTE N TT OT ane sevmernes) AN Ef nese | tren ai LUN 1 2 5 10 20 0 ‘100 ° i} : : 40 : : 80 120 160 Number of Cycles Te CO Surge Forward Current Capability Talo Curve http://www.sipower-inc.com