T2KB SIPOWER | Alldatasheet

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© siPower T2KB (20-100) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el, 2.0A Unit: mm e VarM 200V~1000V e Glass passivated chip " a 14.520.2 \\ ail e High surge forward current capability Type . Class(example) laa e Small size T2KB80 25x45 0530 3 Date Code(example) . Fatt + ~ ~ -/¥ @ Applications T k 020.1 a|it t 080. e General purpose 1 phase Bridge vases — | | | | 1520.2 x rectifier applications i fh) ge | | qe | 0580.1 o720.4, || = sorter Seiot Limiting Values (Absolute Maximum Rating) age \\T2KB20 |T2KB40 | T2KB60 | T2KB80 | T2KB100 Symbol! Conditions Storage Temperature [mief fonts T c +150 Junction Temperature Repetitive Peak Reverse Voltage pve |v | | a0 | ato | ao | a | ‘00 Average Rectified Output A Current 50H; sine wave, R-load, T,=25°C Surge(Non-repetitive)Forward A Current 50H; sine wave, 1 cycle, T.=25°C Lcmnsquesron | [A |tmstamygeminane] | Current Squared Time diode @ Electrical Characteristics (T,=25°C Unless otherwise specified) diode http://www.sipower-inc.com

© siPower T2KB (20-100) Power Semiconductor Technology Bridge Rectifier @Characteristics(Typical) 25(7TTTTIT TTT] Ea = 36 a Re Beco AH eC / 24 y a 7 ey FREES RARER RSS SS at tty FERRE SCC “EEEEEEEHH] = / oat 7 ttt ol LA YE E= 7 CALL [esa] per one diode 04 sre gave ow L| “ZEEE 06 07 08 09 1 14 12 13 14 0 06 1.2 18 2.4 3 Ve (VW) lo (AD Forward Characteristics 20 P-lo Curve 2M T TTT renee SNE crasee apo stat Pe a 1s FEES - Ca’ EE SA NT non-repetiive | SN soldering land 3mm NS CS oth pe CNN id ni i TH os PEE On SS srewoerioa | QC 20 mane free in air NN Oe 0 Ne 0 ee COE 4 2 5 10 20 50 100 0 40 80 120, oy? a Number of Cycles Surge Forward Current Capability loTa Curve pes a GG a a feo LI ee ee Sigg LI { [| | ft fy ft | Ea [| 2ms BE [pms Se ee gO Sms SS Ee 6 8 8s ee Eee é A OO GG a a » LTT | tT tT | tT tT tT] 0 10 20 30 «40 50 «60 70 «80 90 100 110 120 Temperature(‘C) Maxinmum Non-Repetitive Peak Forward Surge Current http://www.sipower-inc.com