T2800 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

EU ^zml-donduckoi Lpioducti, One. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Triacs Bidirectional Triode Thyristors ... designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.

  • Blocking Voltage to 600 Volts
  • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
  • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
  • T2800 —Four Quadrant Gating TELEPHONE: (973) 376-2922 T2800 TRIACs

8 AMPERES RMS

-O MT1 (TO-220AB) MAXIMUM RATINGS (Tj = 25"C unless otherwise noted.; Rating Peak Repetitive Off-State VoltageC1) (Tj = -40 to +100°C, Gate Open) T2800 B D M RMS On-State Current (Tc = +80"C) (Conduction Angle = 360°) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, Tj = +80°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 1 u.s) Average Gate Power Peak Gate Trigger Current (Pulse Width = 1 us) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM IT(RMS) !TSM |2t PGM PG(AV) 'GTM TJ Tstg Value 200 400 600 100 0.35 -40 to +100 -40 to +150 Unit Volts Amps Amps A2S Watts Watt Amps THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RSJC Max 2.2 Unit °C/W 1 VQRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM. Gate Open) TC = 25°C TC = 100°C Peak On-State Voltage (Either Direction)* (Ij = 30 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, R|_ = 12 Ohms) MT2(+), G(+) T2800 MT2(+), G(-) T2800 MT2(-), G(-) T2800 MT2(-), G(+) T2800 Gate Trigger Voltage (Continuous dc) (All Polarities) (VD = 12 Vdc, RL = 100 Ohms) (R|_ = 125 Ohms, VD = VDRM. TC = 100°C) Holding Current (Either Direction) (VD = 12 Vdc, Gate Open) T2800 Gate Controlled Turn-On Time (VD = Rated VDRM. IT = 10 A- 'GT = 80 mA, Rise Time = 0.1 us) Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM. 'T(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80"C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM. Exponential Voltage Rise, Gate Open, TC = 100 C) T2800 B D M Symbol 'DRM VTM IGT VGT IH <gt dv/dt(c) dv/dt Min 0.2 100 Typ 1.7 1.25 1.6 Max 2.5 Unit LiA mA Volts mA Volts mA us V/LIS V/us *Pulse Test: Pulse Width s 300 us, Duty Cycle s 2%. STYLE 4: PIN1. MAIN TERMINAL 1 2, MAIN TERMINAL 2

3 GATE

4 MAIN TERMINAL 2

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982. 2. CONTROLLING DIMENSION INCH

3 DIMENSION 2 DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C F G H J K L N Q R S T U V INCHES MIN 0.570 0.380 0.160 0.025 0.142 0.095 0110 0.014 0.500 0,045 0.190 0.100 0.080 0.045 0.235 0.000 0.045 MAX 0.620 0.405 0.190 0.035 3 K7 C 105 0.155 0.022 0.562 0.055 0.210 0.120 0.110 0.055 0255 0.050 — _ 0.080 MILLIMETERS MIN 14.48 966 4.07 0.64 361 242 280 S3r 1273 1 15 4.83 2.54 2;,4

  • 15 597 0.00 1.15 MAX 1575 1028 4.82 0.88 :•: n 2.66 393 0.55 1427 1 39 5.33 304 2.79 1.39 6.47 1.27 2.04