T2525 ATMEL | Alldatasheet
Document overview
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Technical content
Features
No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode Fusing TTL and CMOS Compatible Suitable Minimum Burst Length /g179 6 or 10 Pulses/Burst
Applications
Audio Video Applications Home Appliances Remote Control Equipment
Description
The IC T2525 is a complete IR receiver for data communication developed and opti- mized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram (see Figure 1). The input stage meets two main functions. First, it provides a suitab le bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f 0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gai n as a function of the present environ- mental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. The T2525 operates in a supply-voltage range of 4.5 V to 5.5 V. Figure 1. Block Diagram
2 T2525
Figure 2. Pinning SO8 and TSSOP8
1 VS Supply voltage
2 NC Not connected
3 OUT Data output
4 NC Not connected
5 IN Input PIN diode
6 GND Ground
7 NC Not connected
8 NC Not connected
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
4657D–AUTO–11/03
Electrical Characteristics
Tamb = 25°C, VS = 5 V unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
1 Supply
1.1 Supply-voltage range 1 V S 4 . 555 . 5V C 1.2 Supply current I IN = 0 1 I S 0.8 1.1 1.4 mA B 2O u t p u t
2.1 Internal pull-up
resistor(1) Tamb = 25°C; see Figure 9 on page 7 1,3 R PU 30/40 k /g87 A
2.2 Output voltage low IL = 2 mA;
see Figure 9 on page 7 3,6 V OL 250 mV B 2.3 Output voltage high 3,1 V OH VS - 0.25 Vs V B
2.4 Output current
R2 = 0; see Figure 9 on page 7 3,6 I OCL 8m A B
3 Input
3.1 Input DC current VIN = 0;
see Figure 9 on page 7 5I IN_DCMAX -85 µA C
3.2 Input DC current;
VIN = 0; Vs = 5 V, Tamb = 25°C 5I IN_DCMAX -530 -960 µA B 3.3 Minimum detection threshold current; Figure 3 on page 5 Test signal: see Figure 8 on page 7 V S = 5 V , Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 50(2)
3 IEemin -520 pA B
3.4 Minimum detection threshold current with AC current disturbance IIN_AC100 = 3 µA at 100 Hz Test signal: see Figure 8 on page 7 VS = 5 V, Tamb = 25°C, IIN_DC = 1 µA, square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 50%(2)
3 IEemin -800 pA C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 3. After transformation of input current into voltage
4 T2525
4657D–AUTO–11/03 ESD All pins /g222 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 Reliability Electrical qualification (1000h) in molded SO8 plastic package 3.5 Maximum detection threshold current with VIN > 0V Test signal: see Figure 8 on page 7 VS = 5 V , Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 5%(2) 3I Eemax -400 µA D
4 Controlled Amplifier and Filter
4.1 Maximum value of
variable gain (CGA) GVARMAX 51 dB D
4.2 Minimum value of
variable gain (CGA) GVARMIN -5 dB D
4.3 T otal internal
amplification(3) GMAX 71 dB D
4.4 Center frequency fusing
accuracy of bandpass VS = 5 V, Tamb = 25°C f 0_FUSE -3 f 0 +3 % A
4.5 Overall accuracy center
f r e q u e n c y o f b a n d p a s s f0 -6.7 f0 +4.1 % C 4.6 BPF bandwidth: type N0 - N3 -3 dB; f0 = 38 kHz; see Figure 6 on page 6 B3 . 5 k H z C BPF bandwidth: type N6, N7 -3 dB; f0 = 38 kHz Figure 6 on page 6 B5 . 4 k H z C Electrical Characteristics (Continued) Tamb = 25°C, VS = 5 V unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 3. After transformation of input current into voltage
6 T2525
Figure 6. Typical Bandpass Curve Figure 7. Illustration of Used Terms
8 T2525
4657D–AUTO–11/03 Chip Dimensions Figure 10. Chip Size in µm Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0 Note: 1. Value depends on manufacture location. Dimensions Length inclusive scribe 1.15 mm Width inclusive scribe 1.29 mm Thickness 290 µ ± 5% Pads 90 µ /g180 90 µ Fusing pads 70 µ /g180 70 µ Pad metallurgy Material AlCu/AlSiTi(1) Thickness 0.8 µm Finish Material Si3N4/SiO2 Thickness 0.7/0.3 µm 0,0 1130,1030 T2525 GND IN OUT FUSING VS 63,70 63,660 351,904 723,885 scribe width length
4657D–AUTO–11/03 Notes: 1. xx means the used carrier frequency value f 0 30,33,36,38,40,44 ,56 kHz.(76 kHz type on request) 2. Two pad layout versions (see Figure 11 and Figure 12) available for different assembly demand 3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”) 4. Typical data transmission rate up to bit/s with f 0 = 56 kHz, VS = 5 V (see Figure 5 on page 5) 5. yyy means kind of packaging: Pad Layout Figure 11. Pad Layout 1 (DDW only) Figure 12. Pad Layout 2 (DDW, SO8 or TSSOP8)
Ordering Information
Number PL (2) RPU (3) D(4) Type T2525N0xx(1)-yyy(5) 2 30 2090 Standard type: /g179 10 pulses, enhanced sensibility, high data rate T2525N1xx(1)-DDW 1 30 2090 Standard type: /g179 10 pulses, enhanced sensibility, high data rate T2525N2xx(1)-yyy(5) 2 40 1373 Lamp type: /g179 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N3xx(1)-DDW 1 40 1373 Lamp type: /g179 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N6xx(1)-yyy(5) 2 30 3415 Short burst type: /g179 6 pulses, enhanced data rate T2525N7xx(1)-DDW 1 30 3415 Short burst type: /g179 6 pulses, enhanced data rate T2525 GND IN OUT FUSING VS GND IN OUT VS T2525 FUSING (1) (3) (6) (5)
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