T20XB SIPOWER | Alldatasheet
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© siPower T20XB (20~80) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el. 20.0A 58 Unit: mm « VarM 200V~800V oso Glass passivated chip Type . Class(example) 50803 _ Pate Covelexample) ma 3.6202 e High surge forward current capabilit a gn surg papily { ~T20XB60 0530 . g 5 Ly 8 $ 3 @ Applications 2610.2 Le vj i =y + General Purpose 1 phase Bridge 22402 ( at, so ll rectifier applications Bl ¢ ”| 018 e! 8 ae | oe 5 | 100.2 17.5202" 7.5202) ' eS: mg Limiting Values (Absolute Maximum Rating) T20XB Conditions [20 [40 [60 | 80| lunicorenpene | © | ©] Te Average Rectified Output Current 50H; sine wave, Road, 35 Without Heatsink T.=25°C : rt as 1ms<t<8.3ms Tj=25'C Rating of per diode 239 Current Squared Time roms TF 28 © Rating of Pt m Electrical Characteristics (1,=25'C Unless otherwise specified) asromcvae| | Y | ata Rt mnanen tage |_| Peak Forward Voltage lew=10.0A, Pulse measurement, Rating of per diode Between junction and ambient, Without heatsink Thermal Resistance cy Between junction and lead, Without heatsink http://www.sipower-inc.com
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