T1ZBSMD SIPOWER | Alldatasheet
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© siPower T4ZB (20-80) SMD Power Semiconductor Technology Bridge Rectifier a Features Outline Dimensions and Mark el, 0.8A a Unit: mm g 1Z Var 200V~800V = i i «Glass passivated chip pity sv if Fi e High surge forward current capability ‘ (i aly 5) sy Small size = 1503/3102 _) % 0910.2 3 > <' o Tmax a Applications : : e General purpose 1 phase Bridge il il rectifier applications Type . Class(example) -— + - Le 84 _ |] Date Code(example) To 06 102 sat. 2.520. Limiting Values (Absolute Maximum Rating) 4740.2 Conaitions (a [« [eo [a Loussstenprae | [ef tsa T c +150 Junction Temperature [eam] ot _| a | S0Hzsine wave, Average Rectified Output Current R- |, Ta=25°C ., lesm A " - 30 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, Ta=25'C 2 aw rt ete _ Current Squared Time s_ | 1ms<t<8.3ms Tj=25'C Rating of per diode @ Electrical Characteristics (T.=25°C_Unless otherwise specified) | tom | Symbol Test Condition ox Ieew BA - . . 10 Peak Reverse Current Vam=Varm , Pulse measurement, Rating of per diode Oa , cw ‘uncti A 134 Thermal Resistance Between junction and ambient On glass-epoxi substrate http://www.sipower-inc.com
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