T1WBASMD SIPOWER | Alldatasheet
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© siPower TIWBA (20~80) SMD Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el. 1.0A Unit: mm Ver 200V~800V ; Iw 20, * Glass passivated chip . ha = High surge forward current capabilit i H é [tet Ey 7 oe Serge er peowy e—a! FLA, 4 e Supersmall size 7 = 6 a 3 ~_ttmax @ Applications Al © General purpose 1 phase Bridge C\\ a rectifier applications re = [- _— + | )- T1WB 20 83
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JZ 1002 \\) Class(example) / |< — a 10.5max Limiting Values (Absolute Maximum Rating) kan bytlt—cintis—_f wwaa IS Conditions re oe de . TZ | +150 Junction Temperature Repetitive Peak Reverse Voltage [ven || | a0 | | 0 | 0 | Average Rectified Output A | sotpsine wave, Reload, T.<25°C 1.0 Current " : a Surge(Non-repetitive)Forward lrsm | A | sonpsine wave, 1 cycle, Ts=25C 30 Current : i nw Pe ig. | tS<t<8.3ms Tj=26'C Rating of per Current Squared Time diode @ Electrical Characteristics (T,=25'C Unless otherwise specified) sceiiaaieni?* iaiihaiadl poe | | sewosnnncenansenson — | Thermal Resistance cw Resa Between junction and lead 10 http://www.sipower-inc.com
© siPower TAWBA (20-80) SMD Power Semiconductor Technology Bridge Rectifier @Characteristics(Typical) 2° FREES eg EERE EEE < Lf = 2 ff | rersoe / V oe
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