T1NBSMD SIPOWER | Alldatasheet

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© siPower T1NB (20~80) SMD Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el 1.0A ooyase 4N Unit: mm e VaRM 200V~800V | — \\ 3 e Glass passivated chip foe Ta Ft e High surge forward current capability — 5.0801 e Supersmall size Fi L.0+0. 3520. @ Applications + + - General purpose 1 phase Bridge ~ ~ 3 e rectifier applications Fi T1NB a & 5 S|) 60 51 3] 9 i " + - all 025%. Limiting Values (Absolute Maximum Rating) Coneitions (20 [wo [eo [oo | Lunciontorgwrsure | ef two Average Rectified Output Current A | S50Hzsine wave, |On glass-epoxi substrate 1 R- load, T,=25°C sti Irs | A cone 30 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, T=25°C rt A’s | 1ms<t<8.3ms Tj=25'C Rating of per diode 4 Current Squared Time @ Electrical Characteristics (T,=25°C Unless otherwise specified) | nm | Symbol Test Condition ax Terns BA Z 10 Peak Reverse Current Vaw=Varm , Pulse measurement, Rating of per diode OA ‘cw a . . 134 Thermal Resistance Between junction and ambient ,On glass-epoxi substrate Between junction and lead http://www.sipower-inc.com

© siPower NB (20-80) SMD Power Semiconductor Technology Bridge Rectifier @ Characteristics(Typical) ~ 10 SSS SS 5 2 2 —— se“ TT TT TTT Ty = oA ao + |) | | yt = |} + a “egeege ot —_—— ee Serpe Z woe, «= EEE pe re ee | oa Tn erase oo TATA T |} ee ta 0 0.2 04 06 #08 1.0 1.2 0: “ V, 0 0.2 0.4 0.6 0.8 1 em (V) lo (AD Forward Characteristics P-lo Curve 2 8 TTT sinewave 2 “OO rng and [fm To Spe YY) 8 elo = B NUT TTT oe 2 127) [substrate thickness | — | * s SCO es wo NUT “LTTNET TT TT TT TT I 20 | ONT non-repetitve | | oo NH aN Ts =25'C . gt [essx ro SET HASSETT eae MN ia SE St “CECE TN

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a “TE ETT TT ETT TT TN 0 [ TTT Ty TET 0 | 1 2 5 10 20 50 100 it) 40 80 120 160 Ta (0) Number of Cycles Surge Forward Current Capability lo-Ta Curve http://www.sipower-inc.com