T1N5391 SIPOWER | Alldatasheet
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©’ siPower T1N5391~T1N5399 Power Semiconductor Technology General Rectifier Diodes @ Features @ Outline Dimensions and Mark ele caw 1.5A Unit: mm e VarM 50V~1000V , e High reliability @ Applications Cathode Mark 3.4+0.2 Type \\ © General purpose rectifier applications yy I Poses 63402 Limiting Values (Absolute Maximum Rating) Item Symbol] Unit | | | 5391 | 5392] 5393] 5394] 5395] 5396] 5397| 5398] 5399| Average Forward Current 15 (50H; Half-sine wave, Resistance load, Tirea=50°C) Surge(Non-repetitive)Forward Current 50 (50H; Half-sine wave, 1 cyde,T.=25°C) Junction and Storage Temperature ~40 ~ +150 Operating Ambient Temperature ~40 ~ +150 @ Electrical Characteristics (T,=25°C Unless otherwise specified ) Peak Reverse Current LA | VeweVs rweVeew Fr =10000 Between juncti \\d ambient (Typical) CW http://www.sipower-inc.com
iS siPower T1N5391~T1N5399 Power Semiconductor Technology General Rectifier Diodes @Characteristics(Typical)
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40 NM ‘cycle
4.0 30 AN Ts=25°C TIPS vs PATNI TTT , s_L THM TTT i) 25 50 75 100 125 150 1 10 100 Ta (C) Number of Cycles. le cay) —Ta Derating Surge Forward Current Capability http://www.sipower-inc.com