T1N4001 SIPOWER | Alldatasheet
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©’ siPower T1N4001~T1N4007 Power Semiconductor Technology General Rectifier Diodes @ Features @ Outline Dimensions and Mark ele aye 1.0A Unit: mm e Varm 50V~1000V e High reliability > lf Applications Cathode Mark ©2.7+0.2 © General purpose rectifier applications Type. J 0.80.05 5.0+0.2 Limiting Values (Absolute Maximum Rating) Symbol y | 4001 | 4002 | 4003 | 4004 | 4005 | 4006 | 4007 comers | vx |¥| 0 [|| en en [a convener [vw [vs [wo | am] nen |r| nner ate | vn [ve [| | [| | Average Forward Current 1.0 (50H; Half-sine wave, Resistance load, Tpreak=50°C) Surge(Non-repetitive)Forward Current 30 (50Hz Half-sine wave,1 cycle,T,=25°C) Junction and Storage Temperature -40 ~ +150 Operating Ambient Temperature -40 ~ +150 mw Electrical Characteristics (T,=25°C Unless otherwise specified) Peak Reverse Current nA Vam=Vrem Thermal Resistance . Between junction and ambient (Typical) CW http://www.sipower-inc.com
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