T1M5F-A LITEON | Alldatasheet
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Technical content
MAXIMUM RATINGS (Tj= 25 unless otherwise noticed)℃
FEATURES
One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110 )℃ Commutating di/dt of 1.6 Amps/msec at 110℃ High Surge Current of 12 Amps Pb-Free Package Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACs
1.0 AMPERES RMS
Peak Repetitive Off–State Voltage ( TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open) VDRM, VRRM 400
600 Volts
Full Cycle Sine Wave 50 to 60 Hz (TC = 50℃) IT(RMS) 1.0 Amp Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25℃) ITSM 12.0 Amps Circuit Fusing Consideration (t = 8.3 ms) I t 0.60 A s Peak Gate Power ( t 2.0us ,Tc = 80≦ ℃) PGM 5.0 Watt Average Gate Power (Tc = 80 , t 8.3 ms )℃ ≦ PG(AV) 0.1 Watt Peak Gate Current ( t 2.0us ,Tc = 80≦ ℃) IGM 1.0 Amp Peak Gate Voltage ( t 2.0us ,Tc = 80≦ ℃) VGM 5.0 Volts Operating Junction Temperature Range TJ -40 to +110 ℃ Storage Temperature Range Tstg -40 to +150 ℃ 2 2 REV. 2, Jun-2005, KTXD11Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TO-92 (TO-226AA) SEATING PLANE TO-92 (TO-226AA) All Dimensions in millimeter TO-92 DIM. MIN. MAX. A C D E F G H B 4.45 4.70 5.334.32 3.18 4.19 1.391.15 2.42 2.66 2.04 2.66 3.43 ----- I ----- 2.93
1 Main Terminal 1
2 Gate
3 Main Terminal 2
RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES Characteristic Symbol Value Unit Thermal Resistance - Junction to Lead - Junction to Case - Junction to Ambient RthJL RthJC RthJA 150 /℃ W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds TL 260 ℃ Characteristics Symbol Min Typ Max Unit Peak Reptitive Forward or Reverse Blocking Current Tj =25℃ (VD=Rated VDRM and VRRM; Gate OPen) Tj =110℃ IDRM IRRM ---- ---- ---- ---- 100 uA uA Peak Forward On-State Voltage (ITM=± 1A Peak @Tp 2.0 ms, Duty Cycle 2%)≦ ≦ VTM ---- ---- 1.9 Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc; RL = 100 Ohms) IGT1 IGT2 IGT3 IGT4 ---- ---- ---- ---- ---- ---- ---- ---- 5.0 5.0 5.0 7.0 mA Holding Current (VD = 12 V, Initiating Current = ± 200 mA, Gate Open) IH ---- 1.5 10 mA Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA) tgt ---- 2 ---- us Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc; RL =100 Ohms) VGT1 VGT2 VGT3 VGT4 ---- ---- ---- ---- 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 Volts Latching Current (VD=12V,IG= 10 mA) IL1 IL2 IL3 IL4 ---- ---- ---- ---- 1.6 10.5 1.5 2.5 mA Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 ℃) VGD 0.1 ---- ---- Volts Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, Gate Open, TJ=110 )℃ dv/dt 20 60 ---- V/us Repetitive Critical Rate of Rise of On-State Current Pulse Width = 20 us, IPKmax = 15 A, diG/dt = 1 A/us, f = 60 Hz di/dt ---- ---- 10 A/us Rate of Change of Commutating Current (V D = 400 V, I TM = .84 A, Commutating dv/dt = 1.5 V/us, Gate Open, T J = 110°C, f = 250 Hz, with Snubber) di/dt(c) 1.6 ---- ---- A/ms THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Tc=25 unless otherwise noted)℃ OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS
Figure 6. Maximum Allowable Surge Current