T1620-600W SIPOWER | Alldatasheet

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© siPower 71620-600W/700W T1630-600W ~~ DESCRIPTION 16A TRIACs A | A mf an The T1620-600W/700W and 1630-600W PR) Im co Triacs use high performance glass passivated R chip technology, housed in a fully molded plastic G ISOWATT220AB package. — The SNUBBERLESS 1 concept offers suppression of R-C network, and is suitable for applications ae such as phase control and static switch on ” inductive and resistive loads. ISOWATT220AB (Plastic) MAIN FEATURES [sme [ee [a | | we | oe ABSOLUTE RATINGS (limiting values) li(rms) RMS on-state current c= 75°C 16 A (360° conduction angle) Itsm Non repetitive surge peax on-state current tp = 16.7 ms 165 A (jinitial = 25°C ) (1 cycle, 60 I iz) tp=10ms 195 (1:2 cycle, 50 | 1z) It Value (half-cycle, 50 #z) tp =10ms Critical rate of rise of on-state current Repetitive 20 Aus Gate supply: Ie =500mA = dig /dt = 1 A’us. F=50Hz Non Repetitive Tstg Storage temperature range -40to+150] °C Tj Operating junction temperature range - 40 to + 125 Tl Maximum lead temperature for soldering during 10s at 4.5 mm 260 °C from case Symbol Parameter ae Vorm | Repetitive peak off-state voltage 700 Vv VeRM 1) = 125°C http://www. sipower.us Rev. 0.1 Sipower — The official marketing arm of Zhonghuan Semiconductor P1/5

©’ siPower 71620-600W/700W T1630-600W THERMAL RESISTANCES Rth(j-a) | Junction to ambient Rth(j-c) Junction to case for A.C (360° conduction angle) GATE CHARACTERISTICS (maximum values) Peavyy= 1W Pem=10W(tp=20us) lem=-1 A (tp = 20 us)

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Jauadrant] | 71620 | 11630 [ unit | tgt Vp=Vorm_ Ic = Tj= 25°C TYP 2 us 500mA = dia/dt= 3Aus IRRM Vern rated dV dt* Linear slope up to Tj= 125°C MIN 200 300 Vius Vp=67%Vorm Gate open * | ore ther polarty of electrode A2 voltage with reference to electrode A1. Note : In usual applicat ons where (di dt)c is below 9A ms, the (dV dt)c s always lower than 10V 11s, and, therefore, ts unnecessary to use a shuber R-C networ! accross ~“1620W 11630W tracs, http:/Awww.sipower.us Rev. 0.1 Sipower — The official marketing arm of Zhonghuan Semiconductor P2/5

© siPower 71620-600W/700W T1630-600W Fig. 1: Maximum power dissipation versus RMS Fig. 2: Correlation between maximum power diss'- on-state current. pation and maximum allowable temperature (amb and | case) for different thermal resistances heatsinx + contact. P(W) P(W) Tease (°C) 25 ° ’, ° 25 Rth o°Cw 0 1 ° 7 2 OW 207s 4 \\= 120 5 20/— z ‘| 4 GW ‘ve 90° | co os SN \\S is CALS | 0 evs 60 \\ Lede | SPR OKOK ° tol oh qe po 10 Sh SS 100 Cvs 30 SEE SINR peas SIN, \\ yee ON ghee HL 'rms) ) gL_tamb (0) || aS ee ie 01234567 8 9 1011121314 1516 0 20 40 60 80 100 120 140 Fig. 3: RMS on-state current versus case temper- Fig. 4: Thermal transient impedance junction to ature. case and junction to ambient versus pulse dura- tion. Hrms) ZthiRth _ 20 1 om i —+7i range) EEE EHH Ht K++} _ eri TI TTT {IT

5 FF ee a |

ce > 180° N 13 Sea ttt \\ et hau | Zth(j=2 10 x IH || \\ oo ese

5 IN al as Ay

Te °C) \\ ot et, \\ ETN PUI ETM TIM Tile 0 10 20 30 40 50 60 70 80 90 100110120130 163 16-2 164 1610 TE 44 1-2 SE? Fig. 5: Relative variation of gate trigger current Fig. 6: Non repetitive surge peak on-state current and holding current versus junction temperature. versus number of cycles. Igt(TH1 IniTy Neul) igt(Tj=25°C] ih 1j=25°C) 200 22 \\ 150 2.0 —\\ 18 \\\\ ist

1.6 Nl 100

14 — 1.0 —— 50 ee “40-20 0 20 «440 60 80 100 120 140 41 10 100 1000 http:/Awww.sipower.us Rev. 0.1 Sipower — The official marketing arm of Zhonghuan Semiconductor P3/5

©’ siPower 71620-600W/700W T1630-600W Fig. 7: Non repetitive surge peak on-state current Fig. 8: On-state characteristics (maximum val- for a sinusoidal pulse with width : tp ® 10ms, and ues). corresponding value of It. 1 egy (A) Pt (As) Tey A) E Wjntal 26°C a a a | $$$ '1sm Se eT oe | ye SE inital a Mt [Pere too} 4) eee ed po TT an — i oy ee po {fe ee oe Se 10 Ly i] "| vio Jovan Pe ERR) 10 ,~z Lit | tT 1 10 005 115 2 25 3 35 4 45 5 5.5 PACKAGE MECHANICAL DATA ISOWAI |220AB. BZ 0.173 | 0.181 oo | o | 250 | 2.75 | 0.096 | 0.108 a N 2 7 0,030 | 0.039 o is 0,045 | 0.067 0,045 | 0.067 | 0.195 _| 0.205 ‘ 0.106 ‘ [1 | 10.00 0.108 16.00 typ. 0.630 typ. 28.60 | 30.60 | 1.125 | 1.205 : oll: 10.60 | 0.386 | 0.417 sal 15.90 0.626 0.118 | 0.126 http://www. sipower.us Rev. 0.1 Sipower — The official marketing arm of Zhonghuan Semiconductor P4/5

©’ siPower 71620-600W/700W T1630-600W SiPower Inc. - Legal Notice Disclaimer — All data and specifications are subject to changes without notice SiPower Inc, it's affiliates, agents, distributors and employees neither accept nor assume any responsibility for errors or inaccuracies. All data and specifications are intended for information and provide a product description only. Electrical and mechanical parameters listed in SiPower data sheets and specifications will vary dependent upon application and environmental conditions . SiPower is not liable for any damages occurred or resulting from any circuit, product or end-use application for which it’s products are used. SiPower products are not intended or designed for use in life saving or sustaining apparatus and purchase of any SiPower products automatically indemnifies SiPower against any claims or damages resulting from application malfunction http:/Awww.sipower.us Rev. 0.1 Sipower — The official marketing arm of Zhonghuan Semiconductor PS/5