T1205C-6B

T12XXC-6B ADV | Alldatasheet

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1 / 4 www.advsemi.com Jun,2019 -Rev.1.02 ADV Symbol Items Conditions Ratings Unit VDRM RepetitivePeakOff-StateVoltage Tj=25°C T12XXC-6B 600 V VRRM T12XXC-8B 800 IT(RMS) R.M.SOn-StateCurrent TC=100°C 12 A ITSM SurgeOn-StateCurrent tp=20ms(50Hz)/tp=16.7ms(60Hz) 120/126 A I2t I2tforfusing tp=10ms 78 A2s dI/dt Critical rate of rise of on-state current F=120HzTj=125°C IG=2xIGT ,tr≤100ns 50 A/μs IGM PeakGateCurrent tp=20μsTj=125°C 4 A PG(AV) AverageGatePowerDissipation(Tj=125°C) 1 W PGM PeakGatePowerDissipation(tp=20us,Tj=125°C) 5 W Tj OperatingJunctionTemperature -40~125 °C TSTG StorageTemperature -40~150 °C

3 Quadrants Triacs

G e n e r a l D e s c r ip t io n High currentdensity due to mesatechnology . the T12XXtriac seriesis suitableforgeneralpurpose ACswitching.They canbe usedas an ON/OFF functionin applicationssuchas staticrelays, heating regulation, Highpower motorcontrols e.g. washing machinesandvacuum cleaners,Rectifier-fedDCinductiveloads e.g.DCmotors andsolenoids ,motorspeedcontrollers. F e a t u r e s ◆ Repetitive PeakOff-State Voltage:600V/800V ◆ R.M.S On-StateCurrent(IT(RMS)=12A) ◆ HighCommutation dv/dt ◆ These Devicesare Pb-Freeand areRoHSCompliant A b s o lu t e M a x im u m R a t in g s Scan the QR code to view the latest product information ADV 2.T2 1.T1 3.Gate 1 2 3 TO-220 Isolate

2 / 4 www.advsemi.com Jun,2019 -Rev.1.02 ADV E le c t r ic a l C h a r a c t e r is t ic s (Tj=25°Cunlessotherwisespecified) Symbol Items Conditions T12XXC-6B/8B Unit T1205 T1210 T1235 T1250 IDRM IRRM PeakForwardReverseBlocking Current VDRM =VRRM, Tj=25°C Max. 5 uA VDRM =VRRM, Tj=125°C 1 mA VTM PeakOn-StateVoltage ITM =17A,tp=380μs Max. 1.55 V VGD Q1-Q2-Q3 Non−TriggerGate Voltage VD =VDRM RL =3.3kΩ Tj=125°C Min. 0.2 V VGT Q1-Q2-Q3 GateTriggerVoltage VD =12V ，RL =33Ω Max. 1.3 V IGT Q1-Q2-Q3 GateTriggerCurrent Max. 5 10 35 50 mA IH Q1-Q2-Q3 HoldingCurrent IT =0.1A Max. 10 15 40 60 mA IL Q1-Q3 LatchingCurrent IG =1.2IGT Max. 15 20 50 70 mA Q2 25 35 60 80 dV/dt CriticalRateofRiseofOff-State Voltage VD =2/3VDRM gateopen Tj=125°C Min. 20 40 500 1000 V/μs (dV/dt)c CriticalRateofChangeof CommutatingVoltage (dI/dt)c=-5.3A/ms Tj=125°C Min. 0.5 1 10 25 V/μs Rth(j-c) Junctiontocase(AC) Max. 1.4 °C/W Rth(j-a) Junctiontoambient Max. 60 °C/W V A VD RGV A VD RGV A VD RG V A VD RG RL T2+ T2- Q1(T2+G+) Q3(T2-G-) Q2(T2+G-) RL RL G+G- F IG .1 :T r ia c q u a d r a n t a r e d e f in e d a n d t h e g a t e t r ig g e r t e s t c ir c u it

3 / 4 www.advsemi.com Jun,2019 -Rev.1.02 ADV P A C K A G E M E C H A N IC A L D A T A T O - 2 2 0 P a c k a g e D im e n s io n M a k in g D ia g r a m O r d e r in g in f o r m a t io n Part number Package Marking Packing Quantity T1235C-8B TO-220 T1235C-8B Tube 50pcs Note:GateTriggerCurrent Sensitivityand type05=5mA,10=10mA,35=35mA,50=50mA S y m b o l D im e n s i o n s In M illim e t e r s D im e n s i o n s In In c h e s M in M a x M in M a x A 4.40 4.60 0.173 0.181 B 9.00 9.30 0.354 0.366 C 0.40 0.60 0.015 0.023 c1 2.00 2.60 0.078 0.102 c2 1.23 1.32 0.048 0.051 D 0.70 1.00 0.027 0.039 E 10.00 10.40 0.393 0.409 g 2.40 2.70 0.094 0.106 G 6.20 6.80 0.244 0.267 H 28.00 29.85 1.102 1.175 I 2.65 2.95 0.104 0.116 L 15.80 16.80 0.622 0.661 L1 3.75 0.147 L2 1.14 1.70 0.044 0.066 L3 1.14 1.70 0.044 0.066 Ф 3.60 3.90 0.141 0.153 K 2.60TYP 0.102TYP E IL g A B CD G K φ H T 12 XX C - 8 B T series thyristor Current:12=12A Quadrant:C=3Q Voltage:6=600V,8=800V Package explain: B=TO-220 Gate trigger current:05=5mA 10=10mA,35=35mA,50=50mA T1235C-8B XXXX XXXH XX ADV:Logo X:Internal control code H:Halogen Free ADV:Logo T1235C-8B:Part number X:Internal control code H:Halogen Free ADV

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