T10XB SIPOWER | Alldatasheet
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© siPower T10XB (20~80) Power Semiconductor Technology Bridge Rectifier Outline Dimensions and Mark lM Features 38 Unit: mm el, 10.0A Varn 200V~800V 250.3 _poncoatome yy get ¢ Glass passivated chip Type___Classtovarele) —— — p8e02 ¢ High surge forward current capability T4SB60 0530 25 +9 4% = hh ong . Aq H T 4 2.740.2 a Applications vaso ET TTT a e General purpose 1 phase Bridge iat eee p82): 3 rectifier applications 1.0201 : | 3] g isan | Pam Limiting Values (Absolute Maximum Rating) ! T10XB Symbol Unit Conditions [20 [40 [60 | 80 | lswasetempene | ™ |e | | so lundontemone | [ef |e Average Rectified Output Current 50Hz sine wave, R-load 27 Without Heatsink T.=25'C| : lem | A : “ 170 Mt | A'S | ams<t<8.3ms T)=25'C Rating of per diode 120 Current Squared Time SES Ss TFZ9 © Rating of Ps Dielectric Strength Terminals to case, AC 1 minute @ Electrical Characteristics (T,=25'C Unless otherwise specified ) Peak Forward Voltage ley=5.0A, Pulse measurement, Rating of per diode. leoarrovenecuren | | +A | vey Puce measrerent Raingofperdada, | "| Thermal Resistance cw Between junction and lead, Without heatsink [= | http://www.sipower-inc.com
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