T10KB SIPOWER | Alldatasheet
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© siPower T1OKB (20~80) Power Semiconductor Technology Bridge Rectifier Outline Dimensions and Mark @ Features aK Unit: mm el, 10.0A « Varn 200V~800V vie « cnseams nso aecasaenansey) — —>4_ 5802 *Glass passivated chip ~~ ~F +40KB20 0530 © High surge forward current capability 175 3x48 ° io 3 3 s ~ oe ea |S Ey @ Applications I Pp asso 4 2002] e General purpose 1 phase Bridge =_— Lou a ati > 2 rectifier applications 11804 | [~ 3 >| |o-580-1 , é on a 5.1401! 5.1401'5.1401 See H Limiting Values (Absolute Maximum Rating) T10KB Item {20 |40 [60 | 80 | Average Rectified Output Current 50H7 sine wave, R-load 36 Without heatsink Ta=25'C ° on lism A - “ 200 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, T=25'C rt A’s Ams<t<10ms Tj=25'C Rating of per diode 166 Current Squared Time @ Electrical Characteristics (T,=25'C Unless otherwise specified) Vem Vv 14 Peak Forward Voltage Iu=10.0A, Pulse measurement, Rating of per diode Thermal Resistance cw Between junction and lead, Without heatsink http://www.sipower-inc.com
© siPower THOKB (20-80) Power Semiconductor Technology Bridge Rectifier ™@ Characteristics(Typical)
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