T0905

T0905 ATMEL | Alldatasheet

Document overview

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Technical content

Features

 35 dBm Output Power in CW Mode  High Power Added Efficiency (PAE)  Single Supply Operation (No Negative Rail)  Simple Analog Power Ramp Control  Low Current Consumption in Power-down Mode (Typically ≤ 15 µA)  Small SMD Package (PSSOP28 with Heat Slug)

Applications

 Professional Phones  Hands-free Sets  ISM Band Application  Wireless Infrastructure Preamplifiers

Description

The T0905 is a monolithic integrated power amplifier IC manufactured with Atmel’s Silicon-Germanium (SiGe) process. Due to its open architecture, the device can be used either as a two or three-stage amplifier. Every stage can be matched individu- ally, thus allowing applications in a wide frequency range. The T0905 can be used from 135 MHz up to 600 MHz in both linear and non-linear (saturated) mode. The power gain can be set dynamically by means of an analog control input optionally for each single stage or for the entire power amplifier. Constant gain mode is also possi- ble. The T0905 is suited for CW mode up to 35 dBm. These features, including wide power ramp control, make the T0905 a very flexible power amplifier for many different applications. Apart from telephone applications, the T0905 can also be used for car identification systems and several other wireless communication systems. The single supply volt- age operation at +3.5 V and a negligible leakage current in power-down mode enable a remarkable simplification of the application’s power management. Figure 1. Block Diagram

2 T0905 [Preliminary]

Figure 2. Pinning PSSOP28

1 NC Not connected

2 GND2 Ground

3 GND2 Ground

4 RFIN2 RF input (2-stage operation)

5 VCC1 Supply voltage, first stage

6 GND1 Ground

7 RFIN1 RF input (3-stage operation)

8 VB2_DC Input for gain setting, second stage

9 VBIAS2 Output Buf2

10 VCC_CTL Supply voltage control block

11 BGOUT Output band gap

12 VCTL Control voltage input

13 VCTL1 Control voltage input, first stage

14 VCTL2 Control voltage input, second stage

15 VCTL3 Control voltage input, third stage

16 GAIN1 Gain setting Buf1

17 GAIN2 Gain setting Buf2

18 GAIN3 Gain setting Buf3

19 VBIAS3 Output Buf3

20 VB3_DC Input for gain setting, third stage

21 GND3 Ground

22 RFOUT/VCC3 RF output/supply voltage, third stage

23 RFOUT/VCC3 RF output/supply voltage, third stage

24 RFOUT/VCC3 RF output/supply voltage, third stage

T0905 [Preliminary] 4751D–SIGE–05/04

25 RFOUT/VCC3 RF output/supply voltage, third stage

26 GND3 Ground

27 VB3 Pin to extend the input capacity of stage 3

28 VCC2 Supply voltage second stage

Pin Description (Continued) Pin Symbol Function Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage V CC, no RF V CC1, VCC2, VCC3 0 to +5.5 V Input power P RFin 10 dBm Gain control voltage(1) Vctl 0 to +2.5 V Operating case temperature T c -40 to 100 °C Storage temperature T stg -40 to +150 °C Maximum output power P RFout 36 dBm Note: 1. The part may not survive all maximums applied simultaneously Thermal Resistance Parameters Symbol Value Unit Junction case R thJC 19 K/W Operating Range All voltages are referred to GND Parameters Symbol Value Unit Supply voltage V CC 2.7 to 5.0 V Ambient temperature T amb -40 to +85 °C Input frequency f Rfin 135 to 600 MHz

4 T0905 [Preliminary]

4751D–SIGE–05/04

Electrical Characteristics

Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25°C, 50 Ω input and 50 Ω output match No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

1 Power Supply

1.1 Current consumption power down mode (leakage current) V ctlx ≤ 0.2 V 10, 22 - 25, 28 I1 5 2 5 µ A A 2 150-MHz Amplifier Mode

2.1 Frequency range f Rfin150 135 178 MHz C

2.2 Output power

VCC = 3.5 V Tamb = +25°C PRFin = 3 dBm RL = RG = 50 Ω 22 - 25 P RFout150 34.0 35.0 dBm C

2.3 Extreme conditions

VCC = 2.4 V Tamb = +85°C PRFin = 3 dBm RL = RG = 50 Ω 22 - 25 P RFout150 32.0 33.0 dBm C

2.4 Input power 4 P RFin150 31 0 d B mC

2.5 Power added

VCC = 3.5 V PRFout = 35.0 dBm 10, 22 - 25, 28 PAE150 50 55 % C

2.6 Current consumption

active mode PRFout = 35 dBm 10, 22 - 25, 28 I150 1.64 A C

2.7 Input VSWR PRFin = 0 to 8 dBm

PRFout = 31.0 dBm 4V S W R 150 2:1 C

2.8 Stability/load

PRFout = 31.0 dBm VCC = 4.6 V 22 - 25 VSWR 150 8:1 C 2.9 2nd harmonic distortion 22 - 25 2fo 150 -35 dBc C 2.10 3rd harmonic distortion 22 - 25 3fo 150 -35 dBc C 2.11 4th to 8th harmonic distortion 22 - 25 4fo..8fo 150 -35 dBc C

2.12 Isolation between

PRfin150 = 8 dBm Vctl ≤ 0.2 V (power down) 22 - 25 PRFout150 -30 dBm C 3 450-MHz Amplifier Mode

3.1 Frequency range f Rfin450 380 520 MHz A

3.2 Output power

VCC = 3.5 V Tamb = +25°C PRFin = 3 dBm RL = RG = 50 Ω 22 - 25 P RFout450 34.0 35.0 dBm A

3.3 Extreme conditions

VCC = 2.4 V Tamb = +85°C PRFin = 3 dBm RL = RG = 50 Ω 22 - 25 P RFout450 32.0 33.0 dBm C

3.4 Input power 4 P RFin450 31 0 d B mA

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

T0905 [Preliminary] 4751D–SIGE–05/04

3.5 Power added

VCC = 3.5 V PRFout = 35.0 dBm 10, 22 - 25, 28 PAE450 50 55 % A

3.6 Current consumption

PRFout = 35 dBm PAE = 55% 10, 22 - 25, 28 I450 1.64 A A

3.7 Input VSWR PRfin450 = 0 to 8 dBm

PRFout = 31.0 dBm 4V S W R 450 2:1 C

3.8 Stability/load

PRFout450 = 31.0 dBm VCC = 4.6 V 22 - 25 VSWR 450 8:1 C 3.9 2nd harmonic distortion 22 - 25 2fo 450 -35 dBc A 3.10 3rd harmonic distortion 22 - 25 3fo 450 -35 dBc A 3.11 4th to 8th harmonic distortion 22 - 25 4fo..8fo 450 -35 dBc C

3.12 Isolation between

PRfin150 = 8 dBm Vctl ≤ 0.2 V (power down) 22 - 25 PRFout450 -30 dBm A 4P o w e r C o n t r o l

4.1 Control curve slope PRFout ≥ 5 dBm

PRFout ≥ 25 dBm 22 - 25 S ctl 300 120 350 150 dB/V dB/V C 4.2 Power control range V ctl = 0 to 2.5 V 22 - 25 G ctl 60 dB C 4.3 Control voltage range 12 - 14 V ctl 0.5 2.0 V C

4.4 Control current PRFin = 0 to 8 dBm

Vctl = 0 to 2.0 V 12 - 14 I ctll 200 µA A Electrical Characteristics (Continued) Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25°C, 50 Ω input and 50 Ω output match No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

6 T0905 [Preliminary]

Figure 3. Application Example for 450-MHz PA with Variable Gain

Figure 4. Recommended Package Footprint Extract from the PCB Showing a Part of  Only ground signal traces are recommended directly under the package. layers and the best diversion of the heat.  Heat slug must be soldered to GND.

8 T0905 [Preliminary]

4751D–SIGE–05/04

Package Information

Ordering Information

Extended Type Number Package Remarks T0905-TSPH PSSOP28 Lead-free 9.98 9.80 0.25 0.64 8.32 1.60 1.45 0.10 0.00 6.02 0.2 3.91 2.21 1.80 28 15 11 4 7.29 6.88 technical drawings according to DIN specifications Dimensions in mm

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