T0816 ATMEL | Alldatasheet
Document overview
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Technical content
Features
Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output Current per Channel to 250 mA Total Output Current to 300 mA Rise Time 1.0 ns, Fall Time 1.1 ns On-chip RF Oscillator Control of Frequency and Swing by Use of 2 External Resistors Oscillator Frequency Range from 200 MHz to 500 MHz Oscillator Swing to 100 mA Single 5 V Power Supply Common Enable, Disable Input TTL/CMOS Control Signals Small SSO16 Package and QFN16 Package
Applications
CD-RW Drives Writable Optical Drives
Description
The T0816 is a laser diode driver for the operation of a grounded laser diode for CD-RW drives. It includes three channels for three different optical power levels which are controlled by a separate IC. The read channel generates a continuous output level whereas channels 2 and 3 are provided as write channels with very fast switching speeds. Write current pulses are enabled when a ‘low’ signal is applied to the NE pins. All channels are summed together at the IOUT pin. Each channel can contribute up to 250 mA to the total output current of up to 300 mA. A total gain of 100 (read channel), 250 (channel 2) and 150 (channel 3) are provided between each reference current input and the output. Although the reference inputs are current inputs voltage control is possible by using external resistors. An on-chip RF oscillator is provided to reduce laser mode hopping noise during read mode. Frequency and swing can be set by two external resistors. Oscillation is enabled by a ‘high’ at the ENOSC pin. Complete output current and oscillator switch- off is achieved by a ‘low’ at the ENABLE input. Figure 1. Block Diagram
2 T0816
Figure 2. Pinning SSO16
1 IR Analog Input current, bias voltage approximately GND
2 I2 Analog Input current, bias voltage approximately GND
3 GND Supply Ground
4 RF Analog External resistor to GND sets oscillator frequency
5 I3 Analog Input current, bias voltage approximately GND
6 NER Digital Digital control of read channel (low active)
7 NE2 Digital Digital control of channel 2 (low active)
8 NE3 Digital Digital control of channel 3 (low active)
9 VCC2 Supply +5 V power supply for IOUT
10 ENOSC Digital Enables RF oscillator (high active)
11 ENABLE Digital Enables output current (high active)
12 RS Analog External resistor to GND sets oscillator swing
13 GND Supply Ground
14 IOUT Analog Output current source for laser diode
15 VCC2 Supply +5 V power supply for IOUT
16 VCC1 Supply +5 V power supply for circuit
Figure 3. Pinning QFN16
1 NC – Not connected
2 RF Analog External resistor to GND sets frequency of oscillator A
3 I3 Analog Input current, bias voltage approximately GND
4 NER Digital Digital control of R channel (low active)
5 NE2 Digital Digital control of channel 2 (low active)
6 NE3 Digital Digital control of channel 3 (low active)
7 VCC2 Supply +5 V power supply for IOUT
8 ENOSC Digital Enables RF oscillator (high active)
9 ENABLE Digital Enables output current (high active)
10 RS Analog External resistor to GND sets oscillator swing
13 VCC2 Supply +5 V power supply for IOUT
14 VCC1 Supply +5 V power supply for circuit
15 IR Analog Input current, bias voltage approximately GND
16 I2 Analog Input current, bias voltage approximately GND
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4505G–DVD–09/03 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage V CC -0.5 to +6.0 V Input voltage at IR, I2, I3 V IN1 -0.5 to + 2.0 V Input voltage at NER, NE2, NE3, ENOSC V IN2 -0.5 to VCC + 0.5 V Output voltage V OUT -0.5 to VCC –1 V Power dissipation P Max 0.7 (1) to 1 (2) W Junction temperature T J 150 °C Storage temperature range T Stg -65 to +125 °C Notes: 1. R thJA /g163 115 K/W, Tamb = 70°C 2. R thJA /g163 115 K/W, Tamb = 25°C Thermal Resistance Parameters Symbol Value Unit Junction ambient R thJA 115 (1) K/W Note: 1. Measured with multi-layer test board (JEDEC standard) Operating Range Parameters Symbol Value Unit Supply voltage range V CC 4.5 to 5.5 V Input current IIR II2 II3 < 2.5 < 1.0 <1.7 mA External resistor to GND to set oscillator frequency RF > 3 k /g87 External resistor to GND to set oscillator swing RS > 1 k /g87 Operating temperature range T amb 0 to +70 °C
4505G–DVD–09/03 Electrical Characteristics: General VCC = 5 V, Tamb =25°C, ENABLE = High, NER = Low, NE2 = NE3 = High, ENOSC = Low, unless otherwise specified No. Parameters Test Conditions Pin (1) Symbol Min. Typ. Max. Unit Type*
1 Power Supply
1.1 Supply current, power
ENABLE = Low, NE2 = NE3 = Low 9; 15; 16 ICCPD2 0.3 mA A 1.2 Supply current, read mode, oscillator disabled IIR = 500 µA, II2 = 200 µA, II3 = 333 µA 9; 15;
16 ICCR1 86 mA A
1.3 Supply current, read mode, oscillator enabled IIR = 500 µA, II2 = 200 µA, II3 = 333 µA, ENOSC = High, RS = 7.5 k/g87, RF = 7.5 k/g87 9; 15;
16 ICC
1.4 Supply current, write
IIR = 500 µA, II2 = 200 µA, II3 = 333 µA, NE2 = NE3 = Low 9; 15;
16 ICCW 175 mA A
1.5 Supply current, input
off IIR = II2 = II3 = 0 µA 9; 15;
16 ICCoff 15 mA A
2 Digital Inputs
2.1 NER/NE2/NE3 low
voltage 6, 7, 8 VNE LO 1.3 V A
2.2 NER/NE2/NE3 high
voltage 6, 7, 8 VNE HI 2.0 V A 2.3 ENABLE low voltage 11 VEN LO 0.5 V A 2.4 ENABLE high voltage 11 VEN HI 2.7 V A 2.5 ENOSC low voltage 10 VEO LO 0.5 V A 2.6 ENOSC high voltage 10 VEO HI 3.0 V A
3 Current at Digital Inputs
3.1 NER/NE2/NE3 low
current NE = 0 V 6, 7, 8 INE LO -300 µA A
3.2 NER/NE2/NE3 high
current NE = 5 V 6, 7, 8 INE HI 800 µA A
3.3 ENABLE low current ENABLE = 0 V 11 IEN LO -150 µA A
3.4 ENABLE high current ENABLE = 5 V 11 IEN HI 100 µA A
3.5 ENOSC low current ENOSC = 0 V 10 IEO LO -100 µA A
3.6 ENOSC high current ENOSC = 5 V 10 IEO HI 800 µA A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Related to SSO16 package.
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4505G–DVD–09/03 Electrical Characteristics: Laser Amplifier VCC = 5 V, Tamb = 25°C, ENABLE = High, unless otherwise specified No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
4 Output IOUT
4.1 Total output current Output is sourcing 14 IOUT 300 350 mA A
4.2 Output current per
channel Output is sourcing 14 IOUTR 250 mA A
4.5 IOUT series resistance Total R OUT to VCC rail 14 ROUT 6 /g87 C
4.6 Best fit current gain
IR Channel R(1) 14 GAINR 90 100 130 mA/mA A
4.7 Best fit current gain I2 Channel 2 (1) 14 GAIN2 225 250 325 mA/mA A
4.8 Best fit current gain I3 Channel 3 (1) 14 GAIN3 135 150 195 mA/mA A
4.9 Best fit current offset Any channel (1) 14 IOS -8 +4 mA A
4.10 Output current
linearity Any channel(1) 14 ILIN -3 +3 % A
4.11 IIN input impedance R IN,IR is to GND 1 RIN,IR 400 500 600 /g87 A
4.12 IIN input impedance R IN,I2 is to GND 2 RIN,I2 1000 1250 1500 /g87 A
4.13 IIN input impedance R IN,I3 is to GND 5 RIN,I3 600 750 900 /g87 A
4.14 NE threshold Temperature
stabilized 6, 7, 8 VTH 1.68 V B
4.15 Output off current 1 ENABLE = Low 14 IOFF1 1 mA A
4.16 Output off current 2
NE2 = NE3 = High, IIR = 0, II2 = 200 µA, II3 = 333 µA
14 IOFF2 1 mA A
4.17 Output off current 3 NE2 = NE3 = Low,
IIR = II2 = II3 = 0 µA 14 IOFF3 5 mA A
4.18 IOUT supply sensitivity,
IOUT = 40 mA, VCC = 5 V ± 10%, read only
14 VSER -4 1 %/V A
4.19 IOUT supply sensitivity,
IOUT = 80 mA, 40 mA read + 40 mA write, VCC = 5 V ±/g3210%
14 VSEW -6 0 %/V A
4.20 IOUT current output
IOUT = 40 mA, ENOSC = Low 14 INOO 3 nA/ rt-Hz C 4.21 IOUT temperature sensitivity, read mode IOUT = 40 mA, read only 14 TSER -400 ppm//g176C C
4.22 IOUT temperature
sensitivity, write mode IOUT = 80 mA, 40 mA read + 40 mA write 14 TSEW -400 ppm//g176C C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Linearity of the amplifier is calculated using a best fit method at three operating points of I OUT at 20 mA, 40 mA, and 60 mA. IOUT = (IIN /g180/g32GAIN) + IOS
4505G–DVD–09/03 Electrical Characteristics: Laser Current Amplifier Outputs AC Performance VCC = + 5 V , IOUT = 40 mA DC with 40 mA pulse, Tamb = 25/g176C unless otherwise specified No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
5 Output AC Performance
5.1 Write rise time IOUT = 40 mA (read) +
40 mA (10 to 90%)(1) 14 tRISE 1.0 2.0 ns C
5.2 Write fall time IOUT = 40 mA (read) +
40 mA (10 to 90%)(1) 14 tFALL 1.1 2.0 ns C
5.3 Output current
IOUT = 40 mA (read) + 40 mA(1) 14 OS 5 % C
5.4 IOUT ON propagation
NE 50% High-Low to IOUT at 50% of final value 14 tON 2 ns C
5.5 IOUT OFF propagation
NE 50% Low-High to IOUT at 50% of final value 14 tOFF 2 ns C
5.6 Disable time
ENABLE 50% High- Low to IOUT at 50% of final value 14 tDIS 20 ns C
5.7 Enable time
ENABLE 50% Low- High to IOUT at 50% of final value 14 tEN 20 ns C
5.8 Amplifier bandwidth IOUT = 50 mA, all
channels, -3 dB value 14 BWLCA 16 MHz C
6 Oscillator
6.1 Oscillator frequency RF = 7.5 k /g87 14 FOSC 270 300 330 MHz A 6.2 Osc. temperature coefficient RF = 7.5 k/g87 14 TCOSC -150 ppm//g176C C
6.3 Disable time oscillator
ENOSC 50% High- Low to IOUT at 50% of final value
14 TDISO 4 ns C
6.4 Enable time oscillator
ENOSC 50% Low- High to IOUT at 50% of final value
14 TENO 2 ns C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Load resistor at IOUT 6.8 /g87, measurement with 50-/g87 oscilloscope and 39-/g87 series resistor.
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Figure 4. Oscillator Frequency versus Resistor RF (RS = 7.5 k/g87) Figure 5. Oscillator Swing versus Resistor RS (RF = 7.5 k/g87) Figure 6. Oscillator Frequency Dependency of Swing
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Figure 9. Step Response, Read Channel: 50 mA, Channel 2: 50 mApp Figure 10. Step Response, Read Channel: 50 mA, Channel 2: 250 mApp
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4505G–DVD–09/03
Package Information
Ordering Information
Extended Type Number Package Remarks T0816-TCQ SSO16 Taped and reeled T0816M-TCQG Pb-free SSO16 Taped and reeled T0816-PEQG Pb-free QFN16 Taped and reeled
4505G–DVD–09/03
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