T0806 ATMEL | Alldatasheet
Document overview
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Technical content
Features
Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Grounded Laser Diodes Output Current per Channel up to 250 mA Total Output Current to 300 mA (Minimum) Rise Time 1.0 ns, Fall Time 1.1 ns On-chip RF Oscillator Control of 2 Different Swings by Use of 2 external Resistors Oscillator Frequency Range from 200 MHz to 600 MHz Oscillator Swing to 100 mA Single 5 V Power Supply Common Enable/Disable Input TTL/CMOS Control Signals Small PB-free QFN16 (4 mm × 4 mm) or SSO16 Package
Applications
DVD-ROM with CD-RW Capability (Combo Drives) Combo Drives with CD and DVD Writing Capability
Description
The T0806 is a laser diode driver for the operation of two different grounded laser diodes for DVD-RAM (650 nm) and CD-RW (780 nm) drives. It includes three chan- nels for three different optical power levels which are controlled by a separate IC. The read channel generates a continuous output level whereas channels 2 and 3 are pro- vided as write channels with very fast switching speeds. Write current pulses are enabled when a low signal is applied to the NE pins. All channels are summed together and switched to one of the two outputs IOUTA or IOUTB by the select input SELA. Each channel can contribute up to 250 mA to the total output current of up to 300 mA. A total gain of 100 is provided between each reference current input and the selected output. Although the reference inputs are current inputs, voltage control is possible by using external resistors. An on-chip RF oscillator is provided to reduce laser mode hopping noise during read mode. Swing can be set independently for the two selectable outputs with two different resistors. Oscillation is enabled by a high signal at the ENOSC pin. Complete output current and oscillator switch-off is achieved by a low signal at the ENABLE input. Figure 1. Block Diagram
2 T0806
Figure 2. Pinning SSO16
1 IR Analog Input current, bias voltage approximately GND
2 I2 Analog Input current, bias voltage approximately GND
3 I3 Analog Input current, bias voltage approximately GND
4 RF Analog External resistor to GND sets oscillator frequency of oscillator A
5 NE2 Digital Digital control of channel 2 (low active)
6 NE3 Digital Digital control of channel 3 (low active)
7 ENABLE Digital Enables output current (high active)
8 ENOSC Digital Enables RF oscillator (high active)
9 VCC2 Supply +5 V power supply for IOUT
10 SELA Digital High: selects IOUTA, RSA
11 IOUTB Analog Output current source B for laser diode
12 RSB Analog External resistor to GND sets swing of oscillator B
13 RSA Analog External resistor to GND sets swing of oscillator A
14 GND Supply Ground
15 IOUTA Analog Output current source A for laser diode
16 VCC1 Supply +5 V power supply for IOUT and circuit
Figure 3. Pinning QFN16
1 I3 Analog Input current, bias voltage approximately GND
2 RF Analog External resistor to GND sets oscillator frequency
3 NE2 Digital Digital control of channel 2 (low active)
4 NE3 Digital Digital control of channel 3 (low active)
5 ENABLE Digital Enables output current (high active)
6 ENOSC Digital Enables RF oscillator (high active)
7 VCC2 Supply +5 V power supply for IOUT
8 SELA Digital High: selects IOUTA, RSA
9 IOUTB Analog Output current source B for laser diode
10 RSB Analog External resistor to GND sets swing of oscillator B
11 RSA Analog External resistor to GND sets swing of oscillator A
12 GND Supply Ground
13 IOUTA Analog Output current source A for laser diode
14 VCC1 Supply +5 V power supply for IOUT and circuit
15 IR Analog Input current, bias voltage approximately GND
16 I2 Analog Input current, bias voltage approximately GND
4 T0806
4522ES–DVD–01/04 Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage V CC –0.5 to +6.0 V Input voltage at IR, I2, I3 V IN1 –0.5 to +1.0 V Input voltage at NE2, NE3, ENOSC V IN2 –0.5 to VCC +0.5 V Output voltage V OUT –0.5 to VCC –1 V Total output current I OUT 350 mA Output current per channel I OUT (IR, I2, I3) 300 mA Power dissipation P MAX 0.7 (1) to 1 (2) W Junction temperature T J 150 °C Storage temperature range T Stg –65 to +125 °C Notes: 1. R thJA ≤ 115 K/W, Tamb = 70° C 2. R thJA ≤ 115 K/W, Tamb = 25° C Thermal Resistance Parameters Symbol Value Unit Junction ambient R thJA 135 K/W Recommended Operating Conditions Parameters Symbol Value Unit Supply voltage range V CC 4.5 to 5.5 V Input current I IR/II2/II3 < 3.0 mA External resistor to GND to set oscillator frequency RF > 3 k Ω External resistor to GND to set oscillator swing RSA, RSB > 1 k Ω Operating temperature range T amb 0 to +70 ° C
Ordering Information
Extended Type Number Package Remarks T0806-TCQ SSO16 Taped and reeled T0806-PEQG Pb-free QFN16 (4 mm × 4 mm) Taped and reeled
4522ES–DVD–01/04
Package Information
6 T0806
4522ES–DVD–01/04
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