SVT3025D4 SILAN | Alldatasheet
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Technical content
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 1 of 14 30V N+P CHANNEL MOSFET
DESCRIPTION
SVT3025D4 is a N+P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on -state resistance, provide superior switching performance and high avalanche breakdown tolerance. These devices are widely used in UPS, Power Management for Inverter Systems.
FEATURES
Low gate charge Low Crss Fast switching Improved dv/dt capability 100% avalanche tested Pb-free lead plating RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics Ratings Unit N-channel P-channel VDS 30 -30 V RDS(on)，max 23 38 m ID 23 -17 A Qg.typ 13 13 nC 1,4. Source 2, 5. Gate 3. Drain TO-252-4L 1 2 4 5
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVT3025D4TR TO-252-4L SVT3025D Halogen free Tape & Reel
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 2 of 14 ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TJ=25C) N-channel Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Drain-Source Voltage VDS -- 30 -- -- V Gate-Source Voltage VGS -- -20 -- 20 V Drain Current ID TC=25C -- -- 23 A Drain Current Pulsed (Note 1) IDM TC=25C -- -- 92 A Power Dissipation (Note 2) PD TC=25C -- -- 19 W Single Pulsed Avalanche Energy EAS L=0.1mH, VDD=24V, RG=25, starting temperature TJ=25C -- -- 14 mJ Single Pulsed Current IAS -- -- -- 17 A Operation Junction Temperature Range Storage Temperature Range Tstg -- -55 -- 150 C P-channel Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Drain-Source Voltage VDS -- -30 -- -- V Gate-Source Voltage VGS -- -20 -- 20 V Drain Current ID Drain Current Pulsed (Note 1) IDM TC=25C -- -- -68 A Power Dissipation (Note 2) PD TC=25C -- -- 19 W Single Pulsed Avalanche Energy EAS L=0.1mH, VDD=24V, RG=25, starting temperature TJ=25C -- -- 45 mJ Single Pulsed Current IAS -- -- -- -30 A Operation Junction Temperature Range Storage Temperature Range Tstg -- -55 -- 150 C THERMAL CHARACTERISTICS Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Thermal Resistance, Junction-case, Bottom RθJC -- -- -- 6.5 C/W Thermal Resistance, Junction-ambient RθJA -- -- -- 62.0 C/W Soldering Temperature(SMD) Tsold Reflow soldering: 10±1 sec, 3times Wave soldering: 0-10 sec, 1time -- -- 260 C
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 3 of 14 N-channel ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25C) Static characteristics Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Drain-source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 30 -- -- V Drain-source Leakage Current IDSS VDS=30V, VGS=0V, TJ=25C -- -- 1.0 µA VDS=30V, VGS=0V, TJ=125C -- 0.2 -- Gate-source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µ A 1.0 -- 2.5 V Static Drain-source On State Resistance RDS(on) VGS=10V, ID=4.0A -- 18 23 m VGS=4.5V, ID=2.0A -- 27 36 m Gate Resistance Rg f=1MHz -- 4.2 -- Dynamic characteristics Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Input Capacitance Ciss f=1MHz, VGS=0V, VDS=25V -- 570 -- pF Output Capacitance Coss -- 67 -- Reverse Transfer Capacitance Crss -- 59 -- Turn-on Delay Time td(on) VDD=20V, VGS=10V, RG=3.3Ω, ID=5.0A (Notes 3, 4) -- 3.9 -- ns Turn-on Rise Time tr -- 47 -- Turn-off Delay Time td(off) -- 17 -- Turn-off Fall Time tf -- 12 -- Total Gate Charge Qg VDD=15V, VGS=10V, ID=6.0A (Notes 3, 4) -- 13 -- nC Gate-source Charge Qgs -- 3.0 -- Gate-drain Charge Qgd -- 2.6 -- Gate-plateau Voltage Vplateau -- 4.0 -- V
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 4 of 14 Reverse diode characteristics Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Continuous Source Current IS TC=25C, Integral Reverse P-N Junction Diode in the MOSFET -- -- 23 A Pulsed Source Current IS，pulse -- -- 92 Diode Forward Voltage VSD IS=4.0A, VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=6.0A, VGS=0V, dIF/dt=100A/µs (Note 3) -- 9.0 -- ns Reverse Recovery Charge Qrr -- 3.4 -- nC Notes: 1. Pulse time 5µs; 2. The dissipation power will change with temperature, derating above 25C: 0.15W/C; 3. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 4. Essentially independent of operating temperature.
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 7 of 14 N-CHANNEL TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 8 of 14 P-CHANNEL ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25C) Static characteristics Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Drain-source Breakdown Voltage BVDSS VGS=0V, ID=-250µ A -30 -- -- V Drain-source Leakage Current IDSS VDS=-30V, VGS=0V, TJ=25C -- -- -1.0 µA VDS=-30V, VGS=0V, TJ=125C -- -0.3 -- Gate-source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS, ID=-250µ A -1.0 -- -2.5 V Static Drain-source On State Resistance RDS(on) VGS=-10V, ID=-3.0A -- 24 38 m VGS=-4.5V, ID=-2.0A -- 57 64 m Dynamic characteristics Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Input Capacitance Ciss f=1MHz, VGS=0V, VDS=-25V -- 645 -- pF Output Capacitance Coss -- 91 -- Reverse Transfer Capacitance Crss -- 64 -- Turn-on Delay Time td(on) VDD=-20V, VGS=-10V, RG=3.3Ω, ID=-6.0A (Notes 3,4) -- 2.8 -- ns Turn-on Rise Time tr -- 34 -- Turn-off Delay Time td(off) -- 46 -- Turn-off Fall Time tf -- 45 -- Total Gate Charge Qg VDD=-15V, VGS=-10V, ID=-6.0A (Notes 3,4) -- 13 -- nC Gate-source Charge Qgs -- 3.7 -- Gate-drain Charge Qgd -- 2.4 -- Gate-plateau Voltage Vplateau -- 4.5 -- V Reverse diode characteristics Characteristics Symbol Test conditions Ratings Unit Min. Typ. Max. Continuous Source Current IS TC=25C, Integral Reverse P-N Junction Diode in the MOSFET -- -- -17 A Pulsed Source Current IS，pulse -- -- -68 Diode Forward Voltage VSD IS=-1.0A, VGS=0V -- -- -1.4 V Reverse Recovery Time Trr IS=-6.0A, VGS=0V, VR=-15V, dIF/dt=100A/µs (Note 3) -- 11 -- ns Reverse Recovery Charge Qrr -- 4.7 -- nC Notes: 1. Pulse time 5µs; 2. The dissipation power will change with temperature, derating above 25C: 0.15W/C;
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 9 of 14 3. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 4. Essentially independent of operating temperature.
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 12 of 14 P-CHANNEL TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS -VGS -10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 90% 10% td(on) ton tr td(off) toff tf EAS Test Circuit & Waveform VDS RG VDD VGS L tp ID -BVDSS -IAS -VDD tp Time -VDS(t) -ID(t) EAS = 1 Vgs(th) Qg(th)
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 13 of 14 PACKAGE OUTLINE TO-252-4L UNIT: mm c L H e D E b A A b D E e H L 2.10 2.30 2.50 0.55 0.62 0.70 5.20 5.33 5.46 0.40 0.53 0.65 5.80 6.40 6.30 6.60 6.90 1.35 1.50 1.75 0.50 1.00 c 0.51BSC 0.200.00 MAXNOMMIN MILLIMETER SYMBOL 6.10 1.27BSC 9.40 10.10 10.60 2.90REF Important notice: 1. The instructions are subject to change without notice！ 2. Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and curre nt. Please read the instructions carefully before using our products , including the circuit operation precautions. 3. Our products are consumer electronic products or the other civil electronic products. 4. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole mac hine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. 5. It is strongly recommended to identify the trademark when buying our products. Please contact us if there is any question. 6. Product promotion is endless, our company will wholeheartedly provide customers with better products! 7. Website: http: //www.silan.com.cn
SVT3025D4_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 14 of 14 Part No.: SVT3025D4 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.0 Revision History: 1. First release