SA2132 SILAN | Alldatasheet

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HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev: 2.3 2005.12.29 Http: www.silan.com.cn Page 1 of 8 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Value Unit Supply Voltage VCC 8 V Power Dissipation PD (Note 1) 750 mW Operating Temperature Topr ­25~75 °C Storage Temperature Tstg ­55~150 °C Note 1: Detected above TA= 25°C in the proportion of 6mW /°C for SA2132. AM/FM RADIO RECEIVER DIP­16­300­2.54 SOP­16­225­1.27

DESCRIPTION

SA2132 is AM/FM radio IC (FM F/E+AM/FM IF) which is designed for AM/FM radios. FM local oscillation voltage is set up low relativity, for NE W FCC.

FEATURES

  • For NEW FCC * AM detector coil, FM IFT, IF coupling condenser are not ne eded. * For adopting ceramic discriminator, it is not necessary to adjust the FM quad detector circuit. * Built in varactor diode for AFC * Low supply current: (VCC=3V, TA=25°C) ICCq (FM)=7.3mA (typ.) ICCq (AM)=3.6mA (typ.) * Operating supply voltage range: VCC=1.8~7V (TA=25°C)

ORDERING INFORMATION

SA2132 DIP­16­300­2.54 SA2132S SOP­16­225­1.27 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 AM RF FM/AM FM OSC AM OSC FM DET AF BUFF AMIF AM DET FMIFFM MIX AM MIX AGCFMRF AM RF IN FM RF OUT AM/FM SW FM OSC AM OSC AFC DET OUT QUAD FM RF IN RF GND MIX OUT AGC VCC FM IF IN GNDAM IF IN

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev: 2.3 2005.12.29 Http: www.silan.com.cn Page 2 of 8 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA=25°C, VCC=3 V,F/E : f=98MHz, fm=1 kHz FM IF : f=10.7MHz, Δ f =±75 kHz, fm= 1kHz AM : f=1 MHz, MOD=30%, fm=1 kHz) Note: This characteristics measure in test circuit 2, others m easure in test circuit 1. PIN CONFIGURATION FM RF IN RF GND MIX OUT AGC VCC GND AFC AM OSC FM OSC AM/FM SW FM RF OUT AM RF IN DET OUT QUAD AM IF IN FM IF IN SA2132 Characteristic Symbol Test Condition Min. Typ. Max. Unit ICC (FM) FM mode, Vin=0 ­­ 7.3 11.0 Supply Current ICC (AM) AM mode, Vin=0 ­­ 3.6 7.0 mA Input Limiting Voltage Vin(lim) ­3dB limiting point ­­ 10 ­­ dBµ V EMF Quiescent Sensitivity QS S/N=40dB ­­ 15 ­­ dBµ V EMF F/E Local OSC Voltage VOSCnote f OSC =108 MHz ­­ 130 ­­ mVrms Input Limiting Voltage Vin(lim) IF ­3dB limiting point 38 43 48 dBµ V EMFFM IF Recovered Output Voltage VOD Vin = 80dBµ V EMF 180 240 300 mVrms Signal to Noise Ratio S/N Vin = 80dBµ V EMF ­­ 72 ­­ dB Total Harmonic Distortion THD V in = 80dBµ V EMF ­­ 0.5 ­­ %FM IF AM Rejection Ratio A M R V in = 80dBµ V EMF ­­ 60 ­­ dB Voltage Gain GV Vin = 28dBµ V EMF 20 38 75 mVrms Recovered Output Voltage VOD Vin = 60dBµ V EMF 55 80 110 mVrms Signal to Noise Ratio S/N Vin = 60dBµ V EMF ­­ 41 ­­ dB AM Total Harmonic Distortion THD V in = 60dBµ V EMF ­­ 1.0 ­­ %

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev: 2.3 2005.12.29 Http: www.silan.com.cn Page 3 of 8 PIN DESCRIPTION DC Voltage (V) Pin No Symbol Internal Circuit AM FM

1 FM RF IN

1K¡ 60 pF RFGND 0 0.8 RF GND (GND for FM RF, FM OSC stage) ­ 0 0

3 MIX OUT

3.0 2.9 AGC (FM IF level output) VCC GND 20K¡100K¡ 1K¡ 5K¡ 1K¡ (AGC) (IF level) 0 0 V C C (V C C fo r A M , F M IF stage) ­ 3.0 3.0

6 FM IF IN

330¡ 3.0 3.0

7 AM IF IN

3K¡ 3K¡ 2.3 2.6 GND (GND for AM, FM IF stage) ­ 0 0

9 QUAD

2.5 2.2 (To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev: 2.3 2005.12.29 Http: www.silan.com.cn Page 4 of 8 (Continued) DC Voltage (V) Pin No Symbol Internal Circuit AM FM

10 DET OUT

a b 750¡FM AM VCC a LOW FM,HIGH AM b LOW AM,HIGH FM GND 1.0 0.9

11 AFC

­­ ­­

12 AM OSC

3.0 3.0

13 FM OSC

3.0 3.0 AM/FM SW

  • SW condition V14=VCC→ FM V14=OPEN→ AM
  • V C C f o r F M R F , F M OSC stage GND ­­ 3.0 15 FM RF OUT Cf ­Pin 1 3.0 3.0

16 AM RF IN

3.0 3.0

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev: 2.3 2005.12.29 Http: www.silan.com.cn Page 5 of 8 TEST CIRCUIT(1) 1 2 3 4 5 6 7 8 16 15 14 13 12 911 10 CR VCC = 3 V 0.033­F 220­F SA2132 BPF 330pF T1L2 0.033­FFM AM 2K¡ 0.022­F 75¡ 75¡ AM RF IN Vin 4700pF 0.033­F 22K¡ DET OUT2.2­F1K¡ 0.01­F CF2 CF1 4.7­F 330¡ FM RF IN 75¡ Vin FM­IF IN Vin 50¡ 270¡ BPF: GFWB7 (Soshin Electric Co., Ltd.) CF1: SFE10.7MA5 (Murata Co., Ltd.) CF2: SFU455B ( Murata Co., Ltd.) CR: CDA10.7 MG92C (Murata Co., Ltd.) AM FM TEST CIRCUIT (2) 1 2 3 4 5 6 7 8 16 15 14 13 12 911 10 VCC = 3 V 0.033­F 220­F SA2132 220­F 0.1­F 5pF 470K¡ 1K¡ 2SK161 470K¡ (Note)GND FM OSC monitor 0.01­F L2 Note : FET buff voltage gain ≅ 0dB

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev: 2.3 2005.12.29 Http: www.silan.com.cn Page 6 of 8 COIL DATA Turns Coil No. Test Freq. L (µ H) Co (pF) Qo Wire (mm) Reference ­­ 0.16UEW Toko Co., Ltd. 666SNF­305NK Toko Co., Ltd. 666SNF­306NK T1 AM OSC 796kHz 268 ­­ 65 19 95 ­­ ­­ ­­ 0.05UEW Toko Co., Ltd. 5PNR­5146Y T2 AM IFT 455kHz ­­ 470 60 ­­ ­­ 109 ­­ 7 0.05UEW Toko Co., Ltd. 5PLG­5147X 1 6 L1: FM RF L2: FM OSC T1: AM OSC T2: AM IF VCC Pin 4 VCC AM C.F.FM C.F.Pin 20 TYPICAL APPLICATION CIRCUIT 1 2 3 4 5 6 7 8 16 15 14 13 12 911 10 SA2132 FM RF IN MIX OUT AGC VCC FM IF IN AM IF IN GND QUADDET OUTAFCFM OSCAM/FM SWFM RF OUTAM RF OUT AM OSC RF GND ANT 30p 30p 3.5~4.5C2 30p 0.02­ 100­/10V 150K 330 10­/10V CF1 10.7MHz CF2 455kHz 150K 20p OUT 22K 0.01­ 0.02­ C10 140p 2.5~4.5 C11 30pPVC FM AML2 3.5~4.5 C13 22p VCC C12 0.02­

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev: 2.3 2005.12.29 Http: www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE DIP­16­300­2.54 UNIT: mm 6.35±0.25 4.36MAX3.00MIN 7.62 0.25±0.05 SOP­16­225­1.27 UNIT: mm