SVT20240NT SILAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 8
Technical content
SVT20240NT(P7)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 1 of 8 72A, 200V N-CHANNEL MOSFET
DESCRIPTION
SVT20240NT(P7)(S) is a n N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimi ze on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
FEATURES
72A, 200V, RDS(on)(typ.)=19.7m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1. Gate 2. Drain 3.Source TO-263-2L TO-220-3L 1 2 3 TO-247-3L
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVT20240NT TO-220-3L 20240NT Pb free Tube SVT20240NP7 TO-247-3L 20240NP7 Pb free Tube SVT20240NS TO-263-2L 20240NS Halogen free Tube SVT20240NSTR TO-263-2L 20240NS Halogen free Tape&Reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Ratings Unit SVT20240NT/S SVT20240NP7 Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±30 V Drain Current TC=25°C ID A TC=100°C 51 Drain Current Pulsed IDM 288 A Power Dissipation (TC=25C) -Derate above 25C PD 263 348 W 1.5 2.3 W/C Single Pulsed Avalanche Energy (Note 1) EAS 221 mJ Operation Junction Temperature Range TJ -55～+175 C Storage Temperature Range Tstg -55～+175 C
SVT20240NT(P7)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 2 of 8 THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVT20240NT/S SVT20240NP7 Thermal Resistance, Junction-to-Case RθJC 0.57 0.43 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 50 C/W ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 200 -- -- V Drain-Source Leakage Current IDSS VDS=200V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=± 20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 3 -- 5 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=46A -- 19.7 -- m Gate resistance RG f=1MHz -- 1.7 -- Input Capacitance Ciss f=1MHz,VGS=0V, VDS=25V -- 4434 -- pF Output Capacitance Coss -- 459 -- Reverse Transfer Capacitance Crss -- 182 -- Turn-on Delay Time td(on) VDD=100V, VGS=10V, RG=2.5Ω, ID=46A (Notes 2, 3) -- 28 -- ns Turn-on Rise Time tr -- 44 -- Turn-off Delay Time td(off) -- 48 -- Turn-off Fall Time tf -- 23 -- Total Gate Charge Qg VDD=160V, VGS=10V, ID=46A (Notes 2, 3) -- 88 -- nC Gate-Source Charge Qgs -- 30 -- Gate-Drain Charge Qgd -- 33 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET -- -- 72 A Pulsed Source Current ISM -- -- 288 Diode Forward Voltage VSD IS=46A, VGS=0V -- -- 1.3 V Reverse Recovery Time Trr IS=46A, VGS=0V, VR=50V, dIF/dt=100A/µ s (Note 2) -- 105 -- ns Reverse Recovery Charge Qrr -- 0.44 -- µC Notes: 1. L=0.5mH, VDD=100V, RG=25,starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT20240NT(P7)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 5 of 8 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVT20240NT(P7)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 6 of 8 PACKAGE OUTLINE TO-220-3L UNIT: mm A b c D E L e A2 Q P 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 MAX SYMBOL MIN NOM MILLIMETER A b c D E L e Q P TO-247-3L UNIT: mm A Cb2 D E e L L1 Q b φP 15.50 16.10 4.40 5.20 20.80 21.30 19.72 20.22 5.80 A b c D E e L Q 4.80 5.00 5.20 2.21 2.41 2.59 1.85 2.00 2.15 1.11 1.36 3.252.91 0.51 0.75 21.00 15.80 5.00
5.44 BSC
19.92 4.30 5.60 6.00 1.91 2.25 MAX SYMBOL MIN NOM MILLIMETER —P 3.40 3.80
SVT20240NT(P7)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE (CONTINUED) TO-263-2L UNIT: mm H L A c E L1D b1 b e e A b c D E L 4.30 4.57 4.72 0.71 0.81 0.91 0.30 0.60 8.50 9.35 9.80 10.45 2.00 2.30 2.74 1.75 1.12 1.27 1.42 H 14.70 15.75 c2 1.17 1.27 1.37 e 2.54BSC 0 0.10 0.25 MAX SYMBOL MIN NOM MILLIMETER __ __ b1 1.17 — 1.50 Important notice : 1. The instructions are subject to change without notice！ 2. Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Please read the instructions carefully before using our products, including the circuit operation precautions. 3. Our products are consumer electronic products or the other civil electronic products. 4. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specifi c conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. 5. It is strongly recommended to identify the trademark when buying our products. Please contact us if there is any question. 6. Product promotion is endless, our company will wholeheartedly provide customers with better products! 7. Website: http: //www.silan.com.cn
SVT20240NT(P7)(S)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 8 of 8 Part No.: SVT20240NT(P7)(S) Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.2 Revision History: 1. Add package of SVT20240NS(TO-263-2L) 2. Update characteristics and figure 5, figure 6 3. Update package outline of TO-247-3L 4. Update important notice Rev.: 1.1 Revision History: 1. Update characteristics 2. Update Fig5 and 6 Rev.: 1.0 Revision History: 1. First release