SVT10111ND SILAN | Alldatasheet
Document overview
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Technical content
SVT10111ND_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 1 of 8 14A, 100V N-CHANNEL MOSFET
DESCRIPTION
SVT10111ND is an N-channel enhancement mode power MOS field effect transistor whic h is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on -state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in UPS, Power Management for Inverter Systems .
FEATURES
14A,100V, RDS(on)(typ.)=85m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source TO-252-2L NOMENCLATURE Low voltage trench MOS products Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V Channel polarity: N denotes N channel, P denotes P channel Package information. Example: T:TO-220; D:TO- 252; MJ:TO-251J; S V T X X X R X N X Silan Resistance: R75 denotes 0.7mΩ；7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing SVT10111NDTR TO-252-2L 10111ND Halogen free Tape&Reel
SVT10111ND_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 2 of 8 ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current TC=25° C ID A TC=100°C 9 Drain Current Pulsed IDM 56 A Power Dissipation(TC=25C) -Derate above 25C PD 40 W
0.32 W/C
Energy(Note 1) L=1.0mH EAS 25 mJ L=0.5mH 12 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 3.13 C/W Thermal Resistance, Junction-to-Ambient RθJA 62 C/W ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 100 -- -- V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 1.0 -- 3.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=10A -- 85 105 m VGS=6V, ID=10A -- 90 110 m Gate Resistance RG f=1MHz -- 2.5 -- Input Capacitance Ciss f=1MHz,VGS=0V, VDS=25V -- 1107 -- pF Output Capacitance Coss -- 50.8 -- Reverse Transfer Capacitance Crss -- 38.5 -- Turn-on Delay Time td(on) VDD=50V, VGS=10V, RG=3Ω, ID=10A (Note 2,3) -- 3.9 -- ns Turn-on Rise Time tr -- 28.3 -- Turn-off Delay Time td(off) -- 30.5 -- Turn-off Fall Time tf -- 16.1 -- Total Gate Charge Qg VDD=80V, VGS=10V, ID=10A (Note 2,3) -- 27 -- nC Gate-Source Charge Qgs -- 4.4 -- Gate-Drain Charge Qgd -- 6.5 --
SVT10111ND_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 3 of 8 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 14 A Pulsed Source Current ISM -- -- 56 Diode Forward Voltage VSD IS=10A,VGS=0V -- -- 1.2 V Reverse Recovery Time Trr IS=10A,VGS=0V, dIF/dt=100A/µs -- 26.6 -- ns Reverse Recovery Charge Qrr -- 0.03 -- µC Notes: 1. VDD=50V, RG=10,starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT10111ND_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 6 of 8 TYPICAL TEST CIRCUIT 12V 50KΩ 300nF Same Type as DUT DUT VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS
2 BVDSS
SVT10111ND_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE TO-252-2L UNIT: mm SYMBOL MIN NOM MAX A b c D E e H L 2.10 2.30 2.50 0 --- 0.127 0.66 0.76 0.89 5.10 5.33 5.46 0.45 --- 0.65 0.45 --- 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） 2.30TYP L1 2.90REF Disclaimer : Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures t o avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers!
SVT10111ND_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 8 of 8 Part No.: SVT10111ND Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.3 Revision History: 1. Add EAS values under L= 0.5mh Rev.: 1.2 Revision History: 1. Add Test conditions of RDS(on) Rev.: 1.1 Revision History: 1. Modify the packing and Hazardous Substance Control of TO-252-2L Rev.: 1.0 Revision History: 1. First release