SVT078R0NT SILAN | Alldatasheet
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Technical content
SVT078R0NT/S_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 1 of 7 88A, 68V N-CHANNEL MOSFET
DESCRIPTION
The SVT078R0NT/S is a n N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
FEATURES
88A, 68V，RDS(on)(typ.)=6.0m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source TO-220-3L TO-263-2L 1 23
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing SVT078R0NT TO-220-3L 078R0NT Pb free Tube SVT078R0NS TO-263-2L 078R0NS Halogen free Tube SVT078R0NSTR TO-263-2L 078R0NS Halogen free Tape&Reel ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Symbol Ratings Unit SVT078R0NT SVT078R0NS Drain-Source Voltage VDS 68 V Gate-Source Voltage VGS ±25 V Drain Current TC=25° C ID A TC=100°C 65 Drain Current Pulsed IDM 352 A Power Dissipation (TC=25C) -Derate above 25C PD 140 140 W 0.93 0.93 W/C Single Pulsed Avalanche Energy (Note1) EAS 420 mJ Operation Junction Temperature Range TJ -55～+175 C Storage Temperature Range Tstg -55～+175 C
SVT078R0NT/S_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 2 of 7 THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVT078R0NT SVT078R0NS Thermal Resistance, Junction-to-Case RθJC 1.07 1.07 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 C/W ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 68 -- -- V Drain-Source Leakage Current IDSS VDS=68V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±25V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=35A -- 6.0 8.0 m Gate Resistance RG f=1MHz 2.0 Input Capacitance Ciss f=1MHz,VGS=0V,VDS=30V -- 3962 -- pF Output Capacitance Coss -- 262 -- Reverse Transfer Capacitance Crss -- 180 -- Turn-on Delay Time td(on) VDD=30V, VGS=10V, RG=8Ω, ID=40A (Notes 2,3) -- 24 -- ns Turn-on Rise Time tr -- 46 -- Turn-off Delay Time td(off) -- 73 -- Turn-off Fall Time tf -- 29 -- Total Gate Charge Qg VDD=54V, VGS=10V, ID=40A (Notes 2,3) -- 74.6 -- nC Gate-Source Charge Qgs -- 21.8 -- Gate-Drain Charge Qgd -- 20.5 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 88 A Pulsed Source Current ISM -- -- 352 Diode Forward Voltage VSD IS=20A,VGS=0V -- 0.8 1.2 V Reverse Recovery Time Trr IS=40A,VGS=0V, dIF/dt=100A/µs -- 23 -- ns Reverse Recovery Charge Qrr -- 0.02 -- µC Notes: 1. L=1mH, IAS=29A, VDD=50V, RG=10,starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT078R0NT/S_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 5 of 7 TYPICAL TEST CIRCUIT 12V 50KΩ 300nF Same Type as DUT DUT VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd Figure 1:Gate Charge Test Circuit & Waveform Figure 2:Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Figure 3:Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS
2 BVDSS
SVT078R0NT/S_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 6 of 7 PACKAGE OUTLINE TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 TO-263-2L UNIT: mm SYMBOL MIN NOM MAX A b c D E L 4.30 4.57 4.72 0.71 0.81 0.91 0.30 0.60 8.50 9.35 9.80 10.45 2.00 2.30 2.74 1.75 1.12 1.27 1.42 H 14.70 15.75 c2 1.17 1.27 1.37 --- --- --- --- E L1D b1 b H L A c e e e 2.54BSC 0 0.10 0.25
SVT078R0NT/S_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 7 of 7 Disclaimer : Part No.: SVT078R0NT/S Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.4 Revision History: 1. Delete the package outline of TO-252-2L Rev.: 1.3 Revision History: 1. Update the package outline of TO-220-3L Rev.: 1.2 Revision History: 1. Add the package outline of TO-263-2L Rev.: 1.1 Revision History: 1. Delete the package outline of TO-263-2L Rev.: 1.0 Revision History: 1. First release Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under speci al conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failur e of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers!