SVT068R5NT SILAN | Alldatasheet
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Technical content
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 1 of 11 80A, 60V N-CHANNEL MOSFET
DESCRIPTION
SVT068R5NT/D/S/L5 is a n N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimiz e on-state resistance, provide superior switching performance. These devices are widely used in UPS, Power Management for Inverter Systems.
FEATURES
80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source TO-252-2L 1 3 TO-263-2L TO-220-3L 1 2 3 S S S G D D D D PDFN-8-5X6X0.95-1.27
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVT068R5NT TO-220-3L 068R5NT Pb free Tube SVT068R5NDTR TO-252-2L 068R5ND Halogen free Tape&Reel SVT068R5NSTR TO-263-2L 068R5NS Halogen free Tape&Reel SVT068R5NL5TR PDFN-8-5× 6× 0.95-1.27 068R5NL5 Halogen free Tape&Reel
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 2 of 11 ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TC=25C) Characteristics Symbol Ratings Unit SVT068R5NT/S SVT068R5ND SVT068R5NL5 Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current TC=25°C ID A TC=100°C 57 Drain Current Pulsed IDM 320 A Power Dissipation (TC=25C) -Derate above 25C PD 158 107 100 W 1.05 0.7 0.67 W/C Single Pulsed Avalanche Energy (Note 1) EAS 389 mJ Operation Junction Temperature Range TJ -55~+175 C Storage Temperature Range Tstg -55~+175 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVT068R5NT/S SVT068R5ND SVT068R5NL5 Thermal Resistance, Junction-to-Case RθJC 0.95 1.4 1.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.0 50.0 C/W
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 3 of 11 ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TC=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 60 -- -- V Drain-Source Leakage Current IDSS VDS=60V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µ A 2 -- 4 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=20A -- 7.0 8.5 m Gate Resistance RG f=1MHz -- 5.5 -- Input Capacitance Ciss f=1MHz, VGS=0V, VDS=30V -- 4890 -- pF Output Capacitance Coss -- 235 -- Reverse Transfer Capacitance Crss -- 170 -- Turn-on Delay Time td(on) VDD=30V, VGS=10V, RG=3Ω, ID=30A (Notes 2,3) -- 16 -- ns Turn-on Rise Time tr -- 44 -- Turn-off Delay Time td(off) -- 93 -- Turn-off Fall Time tf -- 26 -- Total Gate Charge Qg VDD=48V, VGS=10V, ID=20A (Notes 2,3) -- 89 -- nC Gate-Source Charge Qgs -- 26 -- Gate-Drain Charge Qgd -- 20 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET -- -- 60 A Pulsed Source Current ISM -- -- 240 Diode Forward Voltage VSD IS=20A, VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=20A, VGS=0V, dIF/dt=100A/µs (Note 2) -- 29 -- ns Reverse Recovery Charge Qrr -- 38 -- nC Notes: 1. L=0.5mH, VDD=50V, RG=10, starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 6 of 11 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 7 of 11 PACKAGE OUTLINE TO-220-3L UNIT: mm A b c D E L e A2 Q P 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 MAX SYMBOL MIN NOM MILLIMETER A b c D E L e Q P TO-252-2L UNIT: mm NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） A c L H be L1 D E A b c D E e H L 2.10 2.30 2.50 0.66 0.76 0.89 5.10 5.33 5.46 0.45 — 0.65 0.45 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 2.30TYP L1 2.90REF 0.1270 MAXNOMMIN MILLIMETER SYMBOL
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 8 of 11 PACKAGE OUTLINE (CONTINUED) TO-263-2L UNIT: mm H L A c E L1D b1 b e e A b c D E L 4.30 4.57 4.72 0.71 0.81 0.91 0.30 0.60 8.50 9.35 9.80 10.45 2.00 2.30 2.74 1.75 1.12 1.27 1.42 H 14.70 15.75 c2 1.17 1.27 1.37 e 2.54BSC 0 0.10 0.25 MAX SYMBOL MIN NOM MILLIMETER __ __ b1 1.17 — 1.50 PDFN-8-5×6×0.95 -1.27 UNIT: mm D E A c H Top View Side View Bottom View 8 5 b L e K 5 8 b K e 1.27 0.154 0.90 — 0.354 6.065.66 SYMBOL A c D E MIN NOM MAX 1.20 0.25 5.404.80 — 1.30 H —3.76 4.30 5.90 6.35 0.30 0.55 1.10 1.50 1.07 1.37 0.60 3.34 3.92 0.30 0.71 0.12 L —0.40 0.71 MILLIMETER
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 9 of 11 CAUTION ELECTROSTATIC SENSITIVE DEVICE DO NOT OPEN OR HANDLE EXPECT AT A STATIC-FREE WORKSTATION MOS DEVICES OPERATE NOTES: Electrostatic charges may exist in many things. Please take following preventive measures to prevent effectively the MOS electric circuit as a result of the damage which is caused by discharge: ⚫ The operator must put on wrist strap which should be earthed to against electrostatic. ⚫ Equipment cases should be earthed. ⚫ All tools used during assembly, including soldering tools and solder baths, must be earthed. ⚫ MOS devices should be packed in antistatic/conductive containers for transportation.
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 10 of 11 Important notice: 1. Silan reserves the right to make changes of this instruction without notice. 2. Customers should obtain the latest relevant information when purchasing and should verify whether such information is latest and complete. Please read this instruction and application manual and related materials carefully before using products, including the circuit operation precautions, etc. 3. The products belong to consumer electronic products. Silan does not give any warranties as to the suitability of the Silan’s product for any specific use. The design intent, design definition and design of the product are not intended for application (the application stated in this instruction includes use, etc.) in transportation equipment, medical equipment, life -saving equipment, aerospace equipment, , non-civil equipment or non-civil use, etc. (the equipment stated in this instruction includes systems, devices, etc., all referred to as equipment).The product should not be used in any equipment or system whose manufacture, use or sale is prohibited under any applicable laws or regulations ("unintended use"). If the product is used for unintended use, therefore the full risks of such products application are borne by the customer and Silan assume s no liability for the product used for the unintended use. If the customer intends to use the Silan’s product in a application where malfunction or failure can be reasonably be expected to result in personal injury, or serious property, or environment damage, the customer shall make adequate assessment, testing and verification, and Silan shall not be liable for such applications. 4. The application of the product described in this instruction, t he application manual of the product and related materials is for illustrative purposes only, and Silan makes no warranty that such application can be used directly without further testing, verification or modification. Silan is not responsible for any assistance in product application or customers’ product design. Customer shall be responsible for the application of Silan’ s products and the design, manufacture and use of customer s’ products using Silan’ s products (in this document, "use products", "apply Silan’s products", "product application" and "customers’ products using Silan’s products" are synonymous). It is the sole responsibility of the customer to take the following actions: 1) Verify and determi ne whether Silan’s products are suitable for the cus tomers’ applications and customer s’ products; 2) All applicable standards of the customers’ industry shall be complied with and fully tested and verified when applying Silan’ s product or using Silan’s product to develop and design customer s’ products; 3) Although Silan is constantly committed to improv e product’s quality and reliability, semiconductor products have possibility to malfunction or fail in various application environments. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for customers’ products using Silan’s product to minimize risks and avoid situations in which a malfunction or failure could cause bodily injury or damage to property ; 4) When using the products, please do not exceed the maximum rating of the products, Stress above one or more limiting va lues will cause damage to the product and the equipment or affect the reliability to the equipment (customers’ product); 5) Ensure customers ’ product using Silan ’s product are designed, manufactured and used in full compliance with all applicable standards, safety standards and other requirements of the customers’ industry. The parameters stated in this instruction may and do vary in different applications, actual performance may vary over time, and customers must use the products within their effective static storage period (within one year from the delivery date of Silan). Customer should confirm the effective static storage period of the product if purchasing from a third party. Silan does not assume any responsibility if the product has exceeded the static storage period when it is used. 5. Do not disassemble, reverse-engineer, alter, modify, decompile or copy product, without Silan’s prior written consent. 6. Please identify Silan’s trademark when purchasing our product. Please contact us if there is any question. Our products are not sold through TAOBAO or any other third-party e-commerce platforms. If customers purchase from such platforms , please contact us in writing before purchasing to confirm whether the product is authentic and original from Silan. 7. Please use and apply product in compliance with all applicable laws and regulations, including but not limited to trade control regulations etc. The product is civil electronic product, please do not use it in non-civil fields. 8. Product promotion is endless, our company will wholeheartedly provide customers with better products! 9. Website: http: //www.silan.com.cn
SVT068R5NT/D/S/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 11 of 11 Part No.: SVT068R5NT/D/S/L5 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.1 Revision History: 1. Add PDFN-8-5× 6× 0.95-1.27 package 2. Update typical characteristics 3. Update important notice Rev.: 1.0 Revision History: 1. First release