SVT044R5NT SILAN | Alldatasheet
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Technical content
SVT044R5NT/D/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 1 of 8 178A, 40V N-CHANNEL MOSFET
DESCRIPTION
SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor whic h is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on -state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems.
FEATURES
178A,40V Low gate charge Low Crss Fast switching Improved dv/dt capability S S S G D D D D TO-220-3L 1 2 3 TO-252-2L 1 3 PDFN-8-5X6X0.95-1.27 1 2 34 5678 1.Gate 2.Drain 3.Source
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVT044R5NT TO-220-3L 044R5NT Pb free Tube SVT044R5NDTR TO-252-2L 044R5ND Halogen free Tape&Reel SVT044R5NL5TR PDFN-8-5X6X0.95-1.27 044R5NL5 Halogen free Tape&Reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Symbol Ratings Unit SVT044R5NT SVT044R5ND SVT044R5NL5 Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current TC=25° C ID 178 A TC=100°C 112 TC=25°C(package limited) 160 128 105 Drain Current Pulsed IDM 640 A Power Dissipation(TC=25C) -Derate above 25C PD 178 112 100 W 1.42 0.90 0.8 W/C Single Pulsed Avalanche Energy(Note 1) EAS 612 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C
SVT044R5NT/D/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 2 of 8 THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVT044R5NT SVT044R5ND SVT044R5NL5 Thermal Resistance, Junction-to-Case RθJC 0.70 1.12 1.25 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.0 50 C/W ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 40 -- -- V Drain-Source Leakage Current IDSS VDS=40V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±25V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 2.0 -- 3.5 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=50A（PDFN5*6） -- 3.0 3.6 Gate Resistance RG f=1MHz -- 2.0 -- Input Capacitance Ciss f=1MHz,VGS=0V,VDS=25V -- 5603 -- pF Output Capacitance Coss -- 542 -- Reverse Transfer Capacitance Crss -- 401 -- Turn-on Delay Time td(on) VDD=20V, VGS=10V, RG=24Ω, ID=160A (Note 2,3) -- 51 -- ns Turn-on Rise Time tr -- 130 -- Turn-off Delay Time td(off) -- 245 -- Turn-off Fall Time tf -- 179 -- Total Gate Charge Qg VDD=32V, VGS=10V, ID=80A (Note 2,3) -- 111 -- nC Gate-Source Charge Qgs -- 30 -- Gate-Drain Charge Qgd -- 32 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 160 A Pulsed Source Current ISM -- -- 640 Diode Forward Voltage VSD IS=50A,VGS=0V -- -- 1.0 V Reverse Recovery Time Trr IS=40A,VGS=0V, dIF/dt=100A/µs(Note 2) -- 28 -- ns Reverse Recovery Charge Qrr -- 0.02 -- µC Notes: 1. L=1mH, VDD=38V, RG=10,starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT044R5NT/D/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 5 of 8 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVT044R5NT/D/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 6 of 8 PACKAGE OUTLINE TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 TO-252-2L UNIT: mm SYMBOL MIN NOM MAX A b c D E e H L 2.10 2.30 2.50 0 --- 0.127 0.66 0.76 0.89 5.10 5.33 5.46 0.45 --- 0.65 0.45 --- 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） 2.30TYP L1 2.90REF
SVT044R5NT/D/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE(CONTINUED) PDFN-8-5X6X0.95-1.27 单位: 毫米 b K e 1.27 0.154 0.90 1.10 0.354 6.165.56 SYMBOL A c D E MIN NOM MAX 1.30 0.254 5.504.90 5.20 5.86 6.15 0.40 1.30 H 4.103.80 4.30 5.85 6.45 0.20 0.60 1.10 1.50 1.07 1.37 3.72 0.66 3.52 3.92 0.36 0.76 0.12 L 0.500.30 0.70 D E A c HE4 b L e K K HE4 D1 Top View Bottom View (X)Side View Bottom View (N) b e L 5 8 5 8 8 5 1.27 0.21 0.90 0.95 0.34 5.80 MIN NOM MAX 1.00 0.25 5.004.80 4.90 5.75 6.00 0.45 4.01 4.11 5.90 6.10 0.35 0.55 1.10 1.17 1.37 3.44 0.61 3.34 3.54 0.51 0.71 0.10 0.610.51 0.71 5.70 3.91 -- -- X N Important notice : The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any s emiconductor product under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the inter national export control laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn
SVT044R5NT/D/L5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.4 http: //www.silan.com.cn Page 8 of 8 Part No.: SVT044R5NT/D/L5 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.4 Revision History: 1. Modify Electrical schematic and TYPICAL TEST CIRCUIT Rev.: 1.3 Revision History: 1. Update characteristics and Fig 5 and 6 Rev.: 1.2 Revision History: 1. Add PDFN-8-5X6X0.95-1.27 2. Update the package outline of TO-220-3L Rev.: 1.1 Revision History: 1. Add TO-252-2L Rev.: 1.0 Revision History: 1. First release