SVT035R5NL5 SILAN | Alldatasheet
Document overview
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Technical content
SVT035R5NL5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 1 of 7 100A, 30V N-CHANNEL MOSFET
DESCRIPTION
The SVT035R5NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
FEATURES
100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability PDFN-8-5X6X0.95-1.27 S S S G D D D D
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVT035R5NL5TR PDFN-8-5X6X0.95-1.27 035R5NL5 Halogen free Tape&Reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 V Drain Current TC=25° C ID 100 A TC=100°C 63 Drain Current Pulsed IDM 400 A Power Dissipation (TC=25C) -Derate above 25C PD 66 W
0.53 W/C
Single Pulsed Avalanche Energy (Note 1) EAS 200 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit Thermal Resistance, Junction-to-Case RθJC 1.9 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W
SVT035R5NL5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 2 of 7 ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 30 -- -- V Drain-Source Leakage Current IDSS VDS=30V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µ A 1 1.6 2.5 V Static Drain-Source On State Resistance RDS(on) VGS=10V, ID=20A -- 4.0 5.5 m VGS=4.5V, ID=15A -- 5.2 7.2 m Gate Resistance RG f=1MHz -- 4.9 -- Input Capacitance Ciss f=1MHz, VGS=0V, VDS=25V -- 2190 -- pF Output Capacitance Coss -- 268 -- Reverse Transfer Capacitance Crss -- 206 -- Turn-on Delay Time td(on) VDD=20V, VGS=4.5V, RG=1.8Ω, ID=60A (Notes 2,3) -- 12 -- ns Turn-on Rise Time tr -- 88 -- Turn-off Delay Time td(off) -- 140 -- Turn-off Fall Time tf -- 83 -- Total Gate Charge Qg VDD=24V, VGS=10V, ID=30A (Notes 2,3) -- 47 -- nC Gate-Source Charge Qgs -- 8.5 -- Gate-Drain Charge Qgd -- 9.9 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET -- -- 100 A Pulsed Source Current ISM -- -- 400 Diode Forward Voltage VSD IS=20A, VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=30A, VGS=0V, dIF/dt=100A/µs (Notes 2) -- 16 -- ns Reverse Recovery Charge Qrr -- 6.9 -- nC Notes: 1. L=0.5mH, VDD=15V, VG=10V, RG=25, starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT035R5NL5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 5 of 7 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVT035R5NL5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 6 of 7 PACKAGE OUTLINE PDFN-8-5X6X0.95-1.27 UNIT: mm D E A c H Top View Side View Bottom View 8 5 b L e K 5 8 b K e 1.27 0.154 0.90 — 0.354 6.065.66 SYMBOL A c D E MIN NOM MAX 1.20 0.25 5.404.80 — 1.30 H —3.76 4.30 5.90 6.35 0.30 0.55 1.10 1.50 1.07 1.37 0.60 3.34 3.92 0.30 0.71 0.12 L —0.40 0.71 MILLIMETER Important notice : 1. The instructions are subject to change without notice！ 2. Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and curre nt. Please read the instructions carefully before using our products , including the circuit operation precautions. 3. Our products are consumer electronic products or the other civil electronic products. 4. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a cert ain possibility of failure or malfunction of any semiconductor product under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. 5. It is strongly recommended to identify the trademark when buying our products. Please contact us if there is any question. 6. Product promotion is endless, our company will wholeheartedly provide customers with better products! 7. Website: http: //www.silan.com.cn
SVT035R5NL5_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 7 of 7 Part No.: SVT035R5NL5 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.1 Revision History: 1. Update package outline Rev.: 1.0 Revision History: 1. First release