SVT035R5ND SILAN | Alldatasheet
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SVT035R5ND(MJ)(T)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 1 of 9 100A, 30V N-CHANNEL MOSFET
DESCRIPTION
The SVT035R5ND(MJ)(T) is a n N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to mi nimize on -state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
FEATURES
100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source TO-252-2L TO-251J-3L TO-220-3L NOMENCLATURE Low voltage trench MOS products Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V Channel polarity: N denotes N channel, P denotes P channel Package information. Example: T:TO-220; D:TO- 252; MJ:TO-251J; S V T X X X R X N X Silan Resistance: R75 denotes 0.7mΩ；7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing SVT035R5NDTR TO-252-2L 035R5ND Halogen free Tape&Reel SVT035R5NMJ TO-251J-3L 035R5NMJ Halogen free Tape SVT035R5NT TO-220-3L 035R5NT Pb free Tape
SVT035R5ND(MJ)(T)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 2 of 9 ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Symbol Ratings Unit SVT035R5ND/MJ SVT035R5NT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current TC=25° C ID 100 A TC=100°C 63 Drain Current Pulsed IDM 400 A Power Dissipation (TC=25C) -Derate above 25C PD 83 104 W 0.7 0.8 W/C Single Pulsed Avalanche Energy (Note 1) EAS 200 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVT035R5ND/MJ SVT035R5NT Thermal Resistance, Junction-to-Case RθJC 1.52 1.2 C/W Thermal Resistance, Junction-to-Ambient RθJA 62 62.5 C/W
SVT035R5ND(MJ)(T)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 3 of 9 ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 30 -- -- V Drain-Source Leakage Current IDSS VDS=30V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 1 1.6 2.5 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=20A -- 4.0 5.5 m VGS=4.5V, ID=15A -- 5.2 7.2 m Gate Resistance RG f=1MHz -- 4.9 -- Input Capacitance Ciss f=1MHz,VGS=0V,VDS=25V -- 2190 -- pF Output Capacitance Coss -- 268 -- Reverse Transfer Capacitance Crss -- 206 -- Turn-on Delay Time td(on) VDD=20V, VGS=4.5V, RG=1.8Ω, ID=60A (Notes 2,3) -- 12. -- ns Turn-on Rise Time tr -- 88 -- Turn-off Delay Time td(off) -- 140 -- Turn-off Fall Time tf -- 83 -- Total Gate Charge Qg VDD=24V, VGS=10V, ID=30A (Notes 2,3) -- 47 -- nC Gate-Source Charge Qgs -- 8.5 -- Gate-Drain Charge Qgd -- 9.9 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 100 A Pulsed Source Current ISM -- -- 400 Diode Forward Voltage VSD IS=20A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=30A,VGS=0V, dIF/dt=100A/µs (Note 2) -- 16 -- ns Reverse Recovery Charge Qrr -- 6.9 -- µC Notes: 1. L=0.5mH, VDD=15V, VG=10V, RG=25,starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVT035R5ND(MJ)(T)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 6 of 9 TYPICAL TEST CIRCUIT 12V 50KΩ 300nF Same Type as DUT DUT VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS
2 BVDSS
SVT035R5ND(MJ)(T)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 7 of 9 PACKAGE OUTLINE TO-252-2L UNIT: mm SYMBOL MIN NOM MAX A b c D E e H L 2.10 2.30 2.50 0 --- 0.127 0.66 0.76 0.89 5.10 5.33 5.46 0.45 --- 0.65 0.45 --- 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） 2.30TYP L1 2.90REF TO-251J-3L UNIT: mm SYMBOL MIN NOM MAX A b c D E e L 2.18 2.30 2.39 0.89 1.00 1.14 0.56 0.89 --- --- 1.05 0.46 --- 0.61 5.97 6.10 6.27 6.35 6.60 6.73
2.29 BCS
0.89 1.27 8.89 9.30 9.65 0.95 1.50 --- --- --- b4 4.95 5.33 5.46
SVT035R5ND(MJ)(T)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 8 of 9 PACKAGE OUTLINE TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 Disclaimer : Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situation s in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers!
SVT035R5ND(MJ)(T)_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.1 http: //www.silan.com.cn Page 9 of 9 Part No.: SVT035R5ND(MJ)(T) Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.1 Revision History: 1. Add SVT035R5NMJ(TO-251J-3L and SVT035R5NT(TO-220-3L) Rev.: 1.0 Revision History: 1. First release