24N60TD2 SILAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
SVS24N60F(FJ)(PN)(T)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 1 of 9 NOMENCLATURE Silan DPMOS Code of D- Well process Nominal current,using 1 or 2 digits: Example:4 denotes 4A Nominal Voltage,using 2 digits Example:60 denotes 600V,65 denotes 650V. Packageinformation.Examp:F:TO-220F. S V S X N X X X D X N denotes N Channel Process breakdown logo default: first generation process D2: second generation process; D3: third generation process
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing SVS24N60FJD2 TO-220FJ-3L 24N60FJD2 Halogen free Tube SVS24N60FD2 TO-220F-3L 24N60FD2 Halogen free Tube SVS24N60PND2 TO-3P 24N60PN Pb free Tube SVS24N60TD2 TO-220-3L 24N60TD2 Halogen free Tube 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore , it’s universal applicable, for example . it is suitable for hard and soft switching topologies.
FEATURES
24A, 600V, RDS(on)(typ.)=0.14@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability 1.Gate 2.Drain 3.Source TO-220FJ-3L 123 TO-3P 123 TO-220F-3L 123 TO-220-3L 123
SVS24N60F(FJ)(PN)(T)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 2 of 9 ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted) Characteristics Symbol Ratings Unit SVS24N60F/F JD2 SVS24N60PN SVS24N60T Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current TC=25° C ID A TC=100°C 15 Drain Current Pulsed IDM 96 A Power Dissipation(TC=25C) -Derate above 25C PD 47 240 208 W 0.38 1.92 1.7 W/C Single Pulsed Avalanche Energy (Note 1) EAS 1062 mJ Reverse Diode dv/dt (Note 2) dv/dt 15 V/ns MOSFET dv/dt Ruggedness (Note 3) dv/dt 50 V/ns Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit SVS24N60F/F JD2 SVS24N60PN SVS24N60T Thermal Resistance, Junction-to-Case RθJC 2.66 0.52 0.6 C/W Thermal Resistance, junction-to-Ambient RθJA 62.5 50 62.5 C/W
SVS24N60F(FJ)(PN)(T)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 3 of 9 ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V，ID=250µ A 600 -- -- V Drain-Source Leakage Current IDSS VDS=600V，VGS=0V -- -- 1.0 uA Gate-Source Leakage Current IGSS VGS=±30V，VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS，ID=250µ A 2.0 -- 4.0 V Static Drain-Source On State Resistance RDS(on) VGS=10V，ID=12A -- 0.14 0.16 Gate resistance Rg f=1.0MHz 2.6 Input Capacitance Ciss VDS=100V，VGS=0V， f=1.0MHz -- 1480 -- pF Output Capacitance Coss -- 84 -- Reverse Transfer Capacitance Crss -- 4.8 -- Turn-on Delay Time td(on) VDD=300V，VGS=10V， RG=25Ω，ID=24A (Note 4,5) -- 21 -- ns Turn-on Rise Time tr -- 74 -- Turn-off Delay Time td(off) -- 213 -- Turn-off Fall Time tf -- 65 -- Total Gate Charge Qg VDD=480V，VGS=10V，ID=24A (Note 4,5) -- 49 -- nC Gate-Source Charge Qgs -- 12 -- Gate-Drain Charge Qgd -- 25 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET -- -- 24 A Pulsed Source Current ISM -- -- 96 Diode Forward Voltage VSD IS=24A，VGS=0V -- -- 1.4 V Reverse Recovery Time Trr VDD=50V，IF=24A， dIF/dt=100A/µs -- 442 -- ns Reverse Recovery Charge Qrr -- 7.0 -- µC Notes: 1. L=79mH，IAS=4.8A，VDD=100V， RG=25， starting TJ=25C; 2. VDS=0~400V,ISD<=24A, TJ=25C; 3. VDS=0~480V; 4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 5. Essentially independent of operating temperature.
SVS24N60F(FJ)(PN)(T)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 6 of 9 TYPICAL TEST CIRCUIT 12V 50KΩ 300nF Same Type as DUT DUT VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS
2 BVDSS
SVS24N60F(FJ)(PN)(T)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 7 of 9 PACKAGE OUTLINE TO-220FJ-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.850.55 1.29 0.650.35 0.50 16.2515.25 15.87 14.9713.97 14.47 11.5810.58 11.08 10.369.73 10.16 2.54BCS 7.006.40 6.68 13.4812.48 12.98 2.00 3.403.00 3.18 3.553.05 3.30 0.70 TO-220F-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.900.70 0.80 1.47 0.650.35 0.50 16.2515.25 15.87 16.3015.30 15.75 10.309.30 9.80 10.369.73 10.16 2.54BCS 7.006.40 6.68 13.4812.48 12.98 3.50/ / 3.403.00 3.18 3.553.05 3.30
SVS24N60F(FJ)(PN)(T)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 8 of 9 PACKAGE OUTLINE (continued) TO-3P UNIT: mm 4.4 5.2 1.2 1.8 1.2 2 0.7 1.3 2.7 3.3 15 16 0.4 0.8 8.5 10 1.7 2.3 5.45typ 39 41.5 C1 \\ b 15.5 0.6 22.6 23.6 D C e L D L e c A b 19.5 21L2 \\ TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40
SVS24N60F(FJ)(PN)(T)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 9 of 9 Disclaimer : Part No.: SVS24N60F(FJ)(PN)(T)D2 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.3 Revision History: 1. Modify the value of PD and RJC 2. Update SOA Rev.: 1.2 Revision History: 1. Add SVS24N60TD2（T0-220-3L） Rev.: 1.1 Revision History: 1. Modify characteristics and Fig 5 and 6 Rev.: 1.0 Revision History: 1. First release Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could c ause loss of body injury or damage to property. Silan will supply the best possible product for customers!