SVF6N70MJG SILAN | Alldatasheet
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SVF6N70MJG/D/K/N_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.9 http: //www.silan.com.cn Page 1 of 11 6A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on -state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC -DC power supplies, DC -DC converters and H-bridge PWM motor drivers.
FEATURES
6A,700V,RDS(on(typ.)=1.35@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source 123 TO-262-3L 1 2 3 TO-251N-3L TO-251J-3L 1 2 3 TO-252-2L 1 3
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVF6N70MJG TO-251J-3L SVF6N70MJG Halogen free Tube SVF6N70DTR TO-252-2L SVF6N70D Halogen free Tape & Reel SVF6N70K TO-262-3L SVF6N70K Pb free Tube SVF6N70MN TO-251N-3L 6N70MN Halogen free Tube
SVF6N70MJG/D/K/N_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.9 http: //www.silan.com.cn Page 2 of 11 ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) Characteristics Symbol Ratings Unit SVF6N70MJG/D/N SVF6N70K Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Drain Current TC=25° C ID 6.0 A TC=100°C 3.8 Drain Current Pulsed IDM 24.0 A Power Dissipation(TC=25C) -Derate above 25C PD 128 130 W 1.02 1.04 W/C Single Pulsed Avalanche Energy (Note 1) EAS 463 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVF6N70MJG/D/N SVF6N70K Thermal Resistance, Junction-to-Case RθJC 0.98 0.96 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.0 62.5 C/W ELECTRICAL CHARACTERISTICS (Tc=25C UNLESS OTHERWISE NOTED) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 700 -- -- V Drain-Source Leakage Current IDSS VDS=700V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=3.0A -- 1.35 1.7 Input Capacitance Ciss VDS=25V,VGS=0V, f=1.0MHz -- 770 -- pF Output Capacitance Coss -- 90 -- Reverse Transfer Capacitance Crss -- 8.2 -- Turn-on Delay Time td(on) VDD=350V,ID=6.0A, RG=25 (Note 2,3) -- 14 -- ns Turn-on Rise Time tr -- 29 -- Turn-off Delay Time td(off) -- 52 -- Turn-off Fall Time tf -- 30 -- Total Gate Charge Qg VDS=560V,ID=6.0A, VGS=10V (Note 2,3) -- 21 -- nC Gate-Source Charge Qgs -- 5.6 -- Gate-Drain Charge Qgd -- 10 --
SVF6N70MJG/D/K/N_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.9 http: //www.silan.com.cn Page 3 of 11 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 6.0 A Pulsed Source Current ISM -- -- 24.0 Diode Forward Voltage VSD IS=6.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=6.0A,VGS=0V, dIF/dt=100A/µs(Note 2) -- 465 -- ns Reverse Recovery Charge Qrr -- 3 -- µC Notes: 1. L=30mH, IAS=5.00A,VDD=100V, RG=25, starting TJ=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resitance Variation vs. Figure 4. Body Diode Forward Voltage
1 Notes:
Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics
SVF6N70MJG/D/K/N_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.9 http: //www.silan.com.cn Page 6 of 11 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVF6N70MJG/D/K/N_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.9 http: //www.silan.com.cn Page 7 of 11 PACKAGE OUTLINE TO-251J-3L UNIT: mm A c cbe L L1 D L2 E A b c D E e L 2.18 2.30 2.39 0.89 1.00 1.14 0.56 0.89 1.05 0.46 0.61 5.97 6.10 6.27 6.35 6.60 6.73
2.29 BCS
0.89 1.27 8.89 9.30 9.65 0.95 1.50 b4 4.95 5.33 5.46 MAX SYMBOL MIN NOM MILLIMETER __ __ TOP E-MARK ɸ1.30± 0.2 TO-252-2L UNIT: mm A b c D E e H L 2.10 2.30 2.50 0.66 0.76 0.89 5.10 5.33 5.46 0.45 — 0.65 0.45 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） 2.30TYP L1 2.90REF 0.127 MAXNOMMIN MILLIMETER SYMBOL A c L H be L1 D E
SVF6N70MJG/D/K/N_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.9 http: //www.silan.com.cn Page 8 of 11 PACKAGE OUTLINE(CONTINUED) TO-262-3L UNIT: mm A b c D E e L 4.30 4.50 4.70 2.20 2.92 0.71 0.90 1.20 — 1.50 0.34 — 0.65 8.38 9.30 9.80 10.16 10.54
2.54 BSC
c2 1.22 1.30 1.35 12.80 14.10 1.12 1.42 A c 0.80 0.75—— D e L e b E MAX SYMBOL MIN NOM MILLIMETER TO-251N-3L UNIT: mm 2.20 2.40 0.97 1.17 0.58 0.80 5.20 5.50 0.43 0.63 6.30 6.90 0.20 0.40
2.286 BSC
0.30 0.50 2.30 0.68 5.80 6.40 0.20 0.30 0.40 5.33 6.10 16.02 17.02 0.74 9.10 9.70 A2 1.07 0.53 6.60 F1 0.30 H 0.40 0.60 0.88 16.52 9.40 A b c D E e MAX SYMBOL MIN NOM MILLIMETER (G3) A b c D E e H c
SVF6N70MJG/D/K/N_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.9 http: //www.silan.com.cn Page 9 of 11 Important notice : Part No.: SVF6N70MJG/D/K/N Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 2.9 Revision History: 1. Deleted NOMENCLATURE 2. Modify Important notice Rev.: 2.8 Revision History: 1. Modify the package outline of TO-251N-3L Rev.: 2.7 Revision History: 1. Modify the package outline of TO-251N-3L 2. Modify ORDERING INFORMATION 3. Modify Important notice Rev.: 2.6 Revision History: 1. Update the package outline of TO-251N-3L 2. Update the package outline of TO-262-3L 3. Update TYPICAL TEST CIRCUIT Rev.: 2.5 Revision History: 1. Add the package outline of TO-251N-3L Rev.: 2.4 Revision History: 1. Update the package outline of TO-251J-3L 2. Modify ordering information Rev.: 2.3 Revision History: 1. Modify the package information of TO-252-2L The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor produc t under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause per sonal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the international export con trol laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn
Document Type:_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 10 of 11 Rev.: 2.2 Revision History: 1. Modify the electrical characteristics and the typical characteristics Rev.: 2.1 Revision History: 1. Modify the thermal characteristics Rev.: 2.0 Revision History: 1. Modify the curve of SOA Rev.: 1.9 Revision History: 1. Add the package of TO-262-3L Rev.: 1.8 Revision History: 1. Modify the marking and package outline of TO-251J-3L Rev.: 1.7 Revision History: 1. Modify the ordering information Rev.: 1.6 Revision History: 1. Modify the ordering information Rev.: 1.5 Revision History: 1. Change the schematic diagram of MOS; Add the value of Rg Rev.: 1.4 Revision History: 1. Delete the package of TO-220F-3L Rev.: 1.3 Revision History: 1. Add the package of TO-252-2L Rev.: 1.2 Revision History: 1. Modify the values of Trr and Qrr Rev.: 1.1 Revision History: 1. Add the package of TO-251J-3L Rev.: 1.0 Revision History: 1. First release
Document Type:_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.0 http: //www.silan.com.cn Page 11 of 11