SVF5N60D

SVF5N60T SILAN | Alldatasheet

Document overview

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Technical content

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC- DC converters and H-bridge PWM motor drivers.

FEATURES

∗ 5A,600V,RDS(on)（typ）=1.88Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE

ORDERING INFORMATION

Part No. Package Marking Material Packing SVF5N60T TO-220-3L SVF5N60T Pb free Tube SVF5N60F TO-220F-3L SVF5N60F Pb free Tube SVF5N60D TO-252-2L SVF5N60D Pb free Tube SVF5N60DTR TO-252-2L SVF5N60D Pb free Tape & Reel SVF5N60MJ TO-251J-3L SVF5N60MJ Pb free Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 1 of 10

SVF5N60T/F/D/MJ_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 2 of 10 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Ratings Characteristics Symbol SVF5N60T/D/MJ SVF5N60F Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V TC=25°C 5 Drain Current TC=100°C ID 3.1 A Drain Current Pulsed IDM 20 A 120 40 W Power Dissipation(TC=25°C) -Derate above 25°C PD 0.96 0.32 W/°C Single Pulsed Avalanche Energy (Note 1) EAS 242 mJ Operation Junction Temperature Range TJ -55～+150 °C Storage Temperature Range Tstg -55～+150 °C THERMAL CHARACTERISTICS Ratings Characteristics Symbol SVF5N 60T SVF5N 60D SVF5N 60MJ SVF5N 60F Unit Thermal Resistance, Junction-to-Case RθJC 1.04 1.04 1.00 3.13 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 110 110 120 °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 -- -- V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=2.5A -- 1.88 2.15 Ω Input Capacitance Ciss -- 479.8 -- Output Capacitance Coss -- 62.7 -- Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, f=1.0MHZ -- 2.1 -- pF Turn-on Delay Time td(on) -- 14.93 -- Turn-on Rise Time tr -- 28.40 -- Turn-off Delay Time td(off) -- 28.27 -- Turn-off Fall Time tf VDD=300V,ID=5.0A, RG=25Ω (Note 2,3) -- 21.73 -- ns Total Gate Charge Qg -- 9.27 -- Gate-Source Charge Qgs -- 2.79 -- Gate-Drain Charge Qgd VDS=480V,ID=5.0A, VGS=10V (Note 2,3) -- 3.37 -- nC

SVF5N60T/F/D/MJ_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 3 of 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS -- -- 5 Pulsed Source Current ISM Integral Reverse P-N Junction Diode in the MOSFET -- -- 20 A Diode Forward Voltage VSD IS=5.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr -- 190 -- ns Reverse Recovery Charge Qrr IS=5.0A,VGS=0V, dIF/dt=100A/µs -- 0.53 -- µC Notes: 1. L=30 mH, I AS=3.78A, VDD=70V, RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.

SVF5N60T/F/D/MJ_Datasheet TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 4 of 10

SVF5N60T/F/D/MJ_Datasheet TYPICAL TEST CIRCUIT VGS 10V Charge 12V 50KΩ 300nF Same Type as DUT DUT VGS HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 6 of 10 3mA VDS Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 -2 LIAS

2 BVDSS

SVF5N60T/F/D/MJ_Datasheet PACKAGE OUTLINE TO-220F-3L(1) UNIT: mm 3.30±0.25 HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 7 of 10 2.80±0.30 9.80±0.50

2.54 TYPE

1.47MAX 0.80±0.15 0.50±0.15 15.80±0.50 6.70±0.30 Φ3.20±0.20 TO-220F-3L(2) UNIT: mm

SVF5N60T/F/D/MJ_Datasheet PACKAGE OUTLINE (continued) TO-252-2L UNIT: mm TO-220-3L UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 8 of 10

SVF5N60T/F/D/MJ_Datasheet PACKAGE OUTLINE (continued) TO-251J-3L UNIT: mm Disclaimer:

• Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers! HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 9 of 10

SVF5N60T/F/D/MJ_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.2 2011.09.13 Http://www.silan.com.cn Page 10 of 1 0 ATTACHMENT

Revision History

2011.02.11 1.0 Original 2011.07.04 1.1 Add the package of TO-251J-3L 2011.09.13 1.2 Update the package outline of TO-220-3L