SVF4N90T SILAN | Alldatasheet
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SVF4N90F/MJ/T/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 1 of 10 4A, 900V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N -channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structu re have been especially tailored to minimize on -state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC -DC power supplies, DC -DC converters and H-bridge PWM motor drivers.
FEATURES
4A,900V,RDS(on)(typ.)=2.7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability TO-220F-3L 1.Gate 2.Drain 3.Source 2 3 TO-220-3L 1 2 3TO-252-2L 1 3 TO-251J-3L 1 2 3
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVF4N90F TO-220F-3L SVF4N90F Pb free Tube SVF4N90MJ TO-251J-3L SVF4N90 Halogen free Tube SVF4N90T TO-220-3L SVF4N90T Pb free Tube SVF4N90DTR TO-252-2L SVF4N90D Halogen free Tape&Reel
SVF4N90F/MJ/T/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 2 of 10 ABSOLUTE MAXIMUM RATINGS (TA=25C UNLESS OTHERWISE NOTED) Characteristics Symbol Ratings Unit SVF4N90F SVF4N90MJ/D SVF4N90T Drain-Source Voltage VDS 900 V Gate-Source Voltage VGS ±30 V Drain Current TC=25C ID A TC=100C 2.5 Drain Current Pulsed IDM 16 A Power Dissipation(TC=25C) -Derate above 25C PD 44 132 150 W Single Pulsed Avalanche Energy (Note 1) L=30mH EAS 344 mJ L=10mH 84 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVF4N90F SVF4N90MJ/D SVF4N90T Thermal Resistance,Junction-to-Case RθJC 2.84 0.95 0.83 C/W Thermal Resistance,Junction-to-Ambient RθJA 62.5 62.0 62.0 C/W
SVF4N90F/MJ/T/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 3 of 10 ELECTRICAL CHARACTERISTICS (Tj=25C UNLESS OTHERWISE NOTED) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 900 -- -- V Drain-Source Leakage Current IDSS VDS=900V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 2.0 -- 4.0 V Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=2A -- 2.7 3.5 Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz -- 707 -- pF Output Capacitance Coss -- 68 -- Reverse Transfer Capacitance Crss -- 3.0 -- Turn-on Delay Time td(on) VDD=450V, ID=4A,RG=25Ω (Note2,3) -- 15 -- ns Turn-on Rise Time tr -- 26 -- Turn-off Delay Time td(off) -- 39 -- Turn-off Fall Time tf -- 28 -- Total Gate Charge Qg VDS=720V, ID=4A,VGS=10V (Note 2,3) -- 17 -- nC Gate-Source Charge Qgs -- 4.1 -- Gate-Drain Charge Qgd -- 7.6 -- Gate resistance RG f=1MHz, Drain Open, OSC Level: 20mV -- 4.2 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET -- -- 4 A Pulsed Source Current ISM -- -- 16 Diode Forward Voltage VSD IS=4A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=4A,VGS=0V, dIF/dt=100A/µs (Note 2) -- 535 -- ns Reverse Recovery Charge Qrr -- 2.5 -- µC Notes: 1. VDD=50V, RG=25, starting TBJB=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
SVF4N90F/MJ/T/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 6 of 10 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVF4N90F/MJ/T/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 7 of 10 PACKAGE OUTLINE TO-251J-3L UNIT: mm A c cbe L L1 D L2 E TOP E-MARK ɸ1.30± 0.2 A b c D E e L 2.18 2.30 2.39 0.89 1.00 1.14 0.56 0.89 1.05 0.46 0.61 5.97 6.10 6.27 6.35 6.60 6.73
2.29 BCS
0.89 1.27 8.89 9.30 9.65 0.95 1.50 b4 4.95 5.33 5.46 MAX SYMBOL MIN NOM MILLIMETER __ __ TO-220F-3L UNIT: mm A b c D E L e A3 Q P 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.900.70 0.80 1.47 0.650.35 0.50 16.2515.25 15.87 16.3015.30 15.75 10.309.30 9.80 10.369.73 10.16 2.54BSC 7.006.40 6.68 13.4812.48 12.98 3.50 3.403.00 3.18 3.553.05 3.30 MAXSYMBOL MIN NOM MILLIMETER A b c D E L e Q P
SVF4N90F/MJ/T/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 8 of 10 PACKAGE OUTLINE TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40 MAX SYMBOL MIN NOM MILLIMETER A b c D E L e Q P TO-252-2L UNIT: mm Eject pin（note1） A c L H be L1 D E A b c D E e H L 2.10 2.30 2.50 0.66 0.76 0.89 5.10 5.33 5.46 0.45 — 0.65 0.45 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 2.30TYP L1 2.90REF 0.1270 MAXNOMMIN MILLIMETER SYMBOL
SVF4N90F/MJ/T/D_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:2.2 http: //www.silan.com.cn Page 9 of 10 Important notice : Part No.: SVF4N90F/MJ/T/D Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 2.2 Revision History: 1. Update the template of the datasheet Rev.: 2.1 Revision History: 1. Add the EAS value under L=10mH Rev.: 2.0 Revision History: 1. Add the package outline of TO-252-2L Rev.: 1.9 Revision History: 1. Add another space figure of TO-220-3L Rev.: 1.8 Revision History: 1. Add TO-220-3L Rev.: 1.7 Revision History: 1. Update the package outline of TO-251J-3L Rev.: 1.6 Revision History: 1. Modify the package information of TO-220F-3L Rev.: 1.5 Revision History: 1. Modify the thermal characteristics Rev.: 1.4 Revision History: 1. Add the package of TO-251J-3L The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor produc t under specific conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause per sonal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the international export con trol laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn
Document Type:_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 10 of 10 Rev.: 1.3 Revision History: 1. Modify the ordering information Rev.: 1.2 Revision History: 1. Change the schematic diagram of MOS Rev.: 1.1 Revision History: 1. Modify “PACKAGE OUTLINE” Rev.: 1.0 Revision History: 1. Initial release