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MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com.cn Page of A 0V N CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is a n N channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F Cell TM structure V DMOS technology. The improved process and cell structure have be en especially tailored to minimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th is device is widely used in AC DC power supplie s, DC DC converters and H bridge PWM mo tor drivers.

FEATURES

0V, R DS(on)(typ 0.44 GS =10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING INFORMATION Part No. Package Marking H azardous S ubstance C ontrol Packing SVF N F TO 220F SVF13N50F Pb free Tube SVF13N50T TO 220 SVF13N50T Pb free Tube SVF13N50PN TO 13N50 Pb free Tube

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com.cn Page of ABSOLUTE MAXIMUM RATINGS T C =25 C , unless otherwise noted Characteristics Symbol Rating s Unit SVF13N50T SVF13N50F SVF13N50PN Drain Source Voltage V DS 500 V Gate Source Voltage V GS V Drain Current T C =25 C I D A T C =100 C 8.2 Drain Current Pulsed I D M A Power Dissipation T C =25 C Derate above 25 C P D 190 218 W 1.52 0.41 1.74 W C Single Pulsed Avalanche Energy (No te 1) E AS 663 mJ Operation Junction Temperature Rating T J +150 C Storage Temperature Rating T stg +150 C THERMAL CHARACTERISTICS Characteristics Symbol Rating s Unit SVF13N50T SVF13N50F SVF13N50PN T h ermal Resistance, Junction to Case R θJC 0.66 2.45 0.57 C T h ermal Resistance, Junction to Ambient R θ JA 62.5 62.5 C

ELECTRICAL CHARACTERISTICS

C =25 C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain S ource B reakdown V oltage B V DSS V GS =0V I D =250µA 500 V D rain Source Leakage Current I DSS V DS 500 V V GS µA Gate S ource L eak age C urrent I GSS V GS V V DS V ±10 nA Gate Threshold V oltage V GS(th) V GS = V DS I D =250µA 2.0 4.0 V O n S tate R esistance R DS(on) V GS V I D 6.5 A 0.44 0.52 Input Capacitance C iss V DS =25V V GS =0V f=1.0MHZ 134 pF Output Capacitance C oss 170 Reverse Transfer Capacitance C rss 13.0 Turn on Delay Time t d(on) V DD =250V I D A R G =4.7 V GS =10V (Note 2,3) 25.53 ns Turn on Rise Time t r 48.80 Turn off Delay Time t off) 72.33 Turn off Fall Time t f 40.27 Total Gate Charge Q g V DS =400V I D =13A V GS =10V (Note 2,3) 29.5 nC Gate Source Charge Q gs 8.00 Gate Drain Charge Q gd 12.3

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com.cn Page of SOURCE DRAIN DIODE RATINGS AND CHARACTERISTI CS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current I S Integral Reverse P N Junction Diode in the MOSFET A Pulsed Source Current I SM Diode Forward Voltage V SD I S =13A V GS =0V V Reverse Recovery Time T rr I S =13A V GS =0V dI F /dt=100A/ µ S (Note 2) 495 ns Reverse Recovery Charge Q rr 5.0 µ C Notes: mH I AS 7.5 A V DD 100 V R G =25 starting T J =25 C Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; Essentially independent of operati ng temperature. TYPICAL CHARACTERISTICS Figure On Region Characteristics Figure Transfer Characteristics 100 100 Drain Source Voltage V DS V Gate Source Voltage V GS V Drain Current I D A Figure On Resistance Variation vs Drain Current and Gate Voltage Source Drain Voltage V SD V Figure Body Diode Forward Voltage Variation vs Source Current and Temperature V GS V V GS V V GS V V GS V Variable Notes 250 µ S pulse test T C C V GS V V GS V V GS V V GS V Notes 250 µ S pulse test V DS V C C 150 C 100 100 C C 150 C Notes 250 µ S pulse test V GS V Note T J C V GS V V GS V

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com. cn Page of TYPICAL CHARACTERISTICS(continued) D r a i n S o u r c e B r e a k d o w n V o l t a g e N o r m a l i z e d B V D S S D r a i n S o u r c e O n R e s i s t a n c e N o r m a l i z e d R D S O N C a p a c i t a n c e p F G a t e S o u r c e V o l t a g e V G S V D r a i n C u r r e n t I D A D r a i n C u r r e n t I D A

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com.cn Page of TYPICAL CHARACTERISTICS(continued) DC ms ms 100 µ s D r a i n C u r r e n t I D A Operation in This Area is Limited by R DS ON Notes T C C T j 150 C Single Pulse Figure Max Safe Operating Area SVF N PN Drain Source Voltage V DS V Figure Maximum Drain Current vs Case Temperature D r a i n C u r r e n t I D A Case Temperature T C 100 125 150

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com.cn Page of TYPICAL TEST CIRCUIT V K Ω 300 nF Same Type as DUT DUT V GS mA V DS V GS V Charge Qg Qg s Qg d Gate Charge Test Circuit Waveform Resistive Switching Test Circuit Waveform V DS V GS R G R L V DD V V DS V GS td on t on tr td off t off t f Unclamped Inductive Switching Test Circuit Waveform V DS R G V DD V L tp I D BV DSS I AS V DD tp Time V DS t I D t E AS LI AS BV DSS BV DSS V DD DUT DUT 200 nF

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com.cn Page of PACKAGE OUTLINE TO 220 F UNIT: mm TO 220 单位 : mm

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.silan.com.cn Page of PACKAGE OUTLINE TO UNIT: mm D isclaimer Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could c ause loss of body injury or damage to property. Silan will supply the best possible product for customers!

MICROELECTRONICS CO.,L TD Rev.: 2.0 http : //www.si lan.com.cn Page of Part No.: SVF13N50T/F/PN Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 2.0 Revision History: Add another solid figure of TO 220 Rev.: 1.9 Revision History: Modify the Rev.: 1.8 Revision History: Modi fy the package information of TO 220F Modify the package information of TO 220 Rev.: 1.7 Revision History: Modify the thermal characteristics Rev.: 1.6 Revision History: Modify the o rdering information Rev.: 1.5 Revision History: Change the schematic diagram of MOS Rev.: 1.4 Revision History: Modify Rev.: 1.3 Revision History: Modify the values of T rr and Q rr Rev.: 1.2 Revision History: Add the halogen free information of SVF13N50F Rev.: 1.1 Revision History: M odify PACKAGE OUTLINE Rev.: 1.0 Revision History: Original