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MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.com.cn Page of A 0V N CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65F/K/S is an N channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F Cell TM structure V DMOS technology. The improved process and cell structure have bee n especially tailored to minimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC DC power supplies, DC DC converters and H bridge PWM m otor drivers.

FEATURES

A,6 0V,R DS(on) (typ.) 0.64 GS =10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING INFORMATION Part No. Package Marking H azardous S ubstance C ontrol Packing SVF12N65F TO SVF12N65F Pb free Tube SVF12N65K TO 262 SVF12N65K Pb free Tube SVF12N65S TO 263 SVF12N65S Halogen free Tube SVF12N65STR TO 263 SVF12N65S Halogen free Tape &Reel

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.c om.cn Page of ABSOLUTE MAXIMUM RATINGS C =25 C unless otherwise noted) Characteristics Sy mbol R atings Unit SVF12N65F SVF12N65K SVF12N65 S Drain Source Voltage V DS 650 V Gate Source Voltage V GS V Drain Current T C = 25°C I D A T C 100 7.6 Drain Current Pulsed I DM A Power Dissipation C =25 C Derate abo ve 25 C P D 209 210 W 0.4 1.67 1.68 W C Single Pulsed Avalanche Energy (Note 1) E AS 790 mJ Operation Junction Temperature Range T J +150 C Storage Temperature Range T stg +150 C THERMAL CHARACTERISTICS Characteristics Symbol R atings Unit SVF12N65F SVF12N65K SVF12N65 S T h ermal Resistance, Junction to Case R θJC 2.44 0.6 0.60 C T h ermal Resistance, Junction to Ambient R θJA 62.5 62.5 62.5 C

ELECTRICAL CHARACTERISTICS

c =25 C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain S ource B reakdown V oltage B V DSS V GS =0V, I D =250µA 650 V D rain Source Leakage Current I DSS V DS 650 V GS =0V 1.0 µA Gate S ource L eak age C urrent I GSS V GS V V DS V ±10 nA Gate Threshold V oltage V GS(th) V GS = V DS , I D =250µA 2.0 4.0 V Static Drain S ource O n S tate R esistance R DS(on) V GS V, I D A 0.8 Input Capacitance C iss V DS 5V,V GS =0V, f=1.0MHz 1390 pF Output Capacitance C oss 156 Reverse Transfer Capacitance C rss 15.2 Turn on Delay Time t d(on) V DD =325V, I D =12A, V GS =10V, R G =24 (Note 2,3) 25.80 ns Turn on Rise Time t r 46.40 Turn off Delay Time t d(off) 82.26 Turn off Fall Time t f 42.13 Total Gate Charge Q g V DS =520V,I D =12A, V GS =10V (Note 2,3) 32.5 nC Gate Source Charge Q gs 7.37 Gate Drain Charge Q gd 14.2

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.com.cn Page of SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current I S Integral Reverse P N Junction Diode in the MOSFET A Pulsed Source Current I SM Diode Forward Voltage V SD I S A,V GS 1.4 V Reverse Recovery Time T rr I S A,V GS =0V, dI F /dt=100A/ µ S (Note 2) 562 ns Reverse Recovery Charge Q rr 5.12 µ C Notes: mH, I AS 6.0 V DD 100 V R G =25 starting T J =25 C Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; Essentially independent of operating temperature.

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.com.cn Page of T YPICAL CHARACTERISTICS Figure Transfer Characteristics D r a i n C u r r e n t I D A Gate Source Voltage V GS V V GS V V GS V Note T J C D r a i n S o u r c e O n R e s i s t a n c e R D S O N Ω Drain Current I D A Figure On Resistance Variation vs Drain Current and Gate Voltage R e v e r s e D r a i n C u r r e n t I D R A Source Drain Voltage V SD V Figure Body Diode Forward Voltage Variation vs Source Current and Temperature Notes 250 µ S pulse test V DS V C C 150 C 100 C C 150 C 100 Notes 250 µ S pulse test V GS V Figure On Region Characteristics D r a i n C u r r e n t I D A 100 100 Drain Source Voltage V DS V V GS V V GS V V GS V V GS V Notes 250 µ S pulse test T C C V GS V V GS V V GS V V GS V Figure Capacitance Characteristics Figure Gate Charge Characteristics C a p a c i t a n c e p F 100 Drain Source Voltage V DS V G a t e S o u r c e V o l t a g e V G S V Total Gate Charge Q g nC V DS 520 V V DS 325 V V DS 130 V 500 1000 2500 3000 Notes V GS V f MHz 2000 1500 C iss C gs C gd C ds shorted C oss C ds C gd C rss C gd C iss C oss C rss Note I D A

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.com.cn Page of T YPICAL CHARACTERISTICS (continued) 100 100 200 D r a i n S o u r c e B r e a k d o w n V o l t a g e B V D S S N o r m a l i z e d Junction Temperature T J C Figure Breakdown Voltage Variation vs Temperature D r a i n S o u r c e O n R e s i s t a n c e R D S O N N o r m a l i z e d Figure On resistance vs Temperature Junction Temperature T J C 150 Notes V GS V I D 250 µ A 100 100 200 150 DC ms ms 100 µ s D r a i n C u r r e n t I D A Operation in this area is limited by R DS ON Notes T C C T j 150 C R DS ON MAX Ω Figure Max Safe Operating Area SVF N F Drain Source Voltage V DS V Notes V GS V I D A DC ms ms 100 µ s D r a i n C u r r e n t I D A Operation in this area is limited by R DS ON Notes T C C T j 150 C R DS ON MAX Ω Figure Max Safe Operating Area SVF N K Drain Source Voltage V DS V D r a i n C u r r e n t I D A Operation in this area is limited by R DS ON Notes T C C T j 150 C R DS ON MAX Ω Figure Max Safe Operating Area SVF N S Drain Source Voltage V DS V 100 µ s ms ms DC Figure Max Drain Current vs Case Temperature D r a i n C u r r e n t I D A Case Temperature T C 100 125 150

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.com.cn Page of TYPICAL TEST CIRCUIT V K Ω 300 nF Same Type as DUT DUT V GS mA V DS V GS V Charge Qg Qg s Qg d Gate Charge Test Circuit Waveform Resistive Switching Test Circuit Waveform V DS V GS R G R L V DD V V DS V GS td on t on tr td off t off t f Unclamped Inductive Switching Test Circuit Waveform V DS R G V DD V L tp I D BV DSS I AS V DD tp Time V DS t I D t E AS LI AS BV DSS BV DSS V DD DUT DUT 200 nF

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www .silan.com.cn Page of PACKAGE OUTLINE TO 220F UNIT: mm TO UNIT: mm D L L L l

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.com.cn Page of PACKAGE OUTLINE (continued) TO 263 UNIT: mm D isclaimer Silan reserves the right to mak e changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All s emiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and t ake essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers!

MICROELECTRONICS CO.,L TD Rev.: 2.9 http: //www.silan.com.cn Page of Part No.: SVF12N65F/K/S Document Type: Da tasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 2.9 Revision History: Delete the package outline of TO 220 Rev.: 2.8 Revision Histo ry: Modify the Electrical characteristics Rev.: 2.7 Revision History: Revise the hazardous substance control of TO 262 3L from halogen free to Pb free Rev.: 2.6 Revision History: A dd the ordering information Rev.: 2.5 Revision History: Modify the package information of TO 220F Modify the package information of TO 220 Rev.: 2.4 Revision History: Modify the thermal c haracteristics Rev.: 2.3 Revision History: Modify the ordering information Rev.: 2.2 Revision History: Add the pin No. Rev.: 2.1 Revision History: Modify the ordering information Change the schematic diagram of MOS Rev.: 1.9 Revision History: Modify PACKAGE OUTLINE Rev.: 1.8 Re vision History: Modify T YPICAL CHARACTERISTICS (continued) Rev.: 1.7 Revision History: Add the package of TO 263

Document Type: Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.: 1.6 http: //www.silan.com.cn Page of Rev.: 1.6 Revision History: Add the package of TO 262 Rev.: 1.5 Revision History: Modify the typ. V alue of R DS(on) Modify the values of T rr and Q rr Rev.: 1.3 Revision History: Add the halogen f ree information of SVF12N65F Rev.: 1.2 Revision History: Modify and the capacitance characteristic curve Rev.: 1.1 Revision History: Modify PACKAGE OUTLINE Original