SVD8N60T SILAN | Alldatasheet
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HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.07.09 Http://www.silan.com.cn Page 1 of 7 ORDERING SPECIFICATIONS Part No. Package Marking Shipping SVD8N60T TO2203L SVD8N60T 50Unit/Tube SVD8N60F TO220F3L SVD8N60F 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Symbol SVD8N60T SVD8N60F Unit DrainSource Voltage VDS 600 V GateSource Voltage VGS ±30 V Drain Current ID 8.0 A Drain Current Pulsed IDM 28 A 147 48 WPower Dissipation(TC=25°C) Derate above 25°C PD 1.18 0.38 W/°C Single Pulsed Avalanche Energy (Note 1) EAS 530 mJ Repetitive Avalanche Energy EAR 14.2 mJ Operation Junction Temperature TJ 55̚+150 °C Storage Temperature Tstg 55̚+150 °C 8A, 600V NCHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an Nchannel enhancement mode power MOS field effect transistor which is produced using Silan proprietary SRinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in ACDC power suppliers, DCDC converters and Hbridge PWM motor drivers.
FEATURES
∗ 8A,600V,RDS(on)˄typ˅=0.96Ω @VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Im proved dv/dt capability
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.07.09 Http://www.silan.com.cn Page 2 of 7 THERMAL CHARACTERISTICS Parameter Symbol SVD8N60T SVD8N60F Unit Therm al Resistance, JunctiontoCase RșJC 0.85 2.6 °C/W Therm al Resistance, JunctiontoAmbient RșJA 62.5 62.5 °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Symbol Test conditions Min. Typ. Max. Unit Drain Source Breakdown Voltage BVDSS V GS=0V, ID=250µA 600 V DrainSource Leakage Current IDSS VDS=600V, VGS=0V 10 µA GateSource Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V GS= VDS, ID=250µA 2.0 4.0 V Static Drain Source On State Resistance RDS(on) V GS=10V, ID=3.5A 0.96 1.2 Ω Input Capacitance Ciss 1095 Output Capacitance Coss 93 Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, f=1.0MHZ 2 pF Turnon Delay Time td(on) 39 Turnon Rise Time tr 29 Turnoff Delay Time td(off) 248 Turnoff Fall Time tf VDD=300V,ID=7.0A, RG=25Ω ns Total Gate Charge Qg 26.8 GateSource Charge Qgs 5.1 GateDrain Charge Qgd VDS=480V,ID=7.0A, VGS=10V nC SOURCEDRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS 8.0 Pulsed Source Current ISM Integral Reverse PN Junction Diode in the MOSFET 28 A Diode Forward Voltage VSD IS=8.0A,VGS=0V 1.4 V Reverse Recovery Time Trr 365 ns Reverse Recovery Charge Qrr IS=8.0A,VGS=0V, dIF/dt=100A/µS 3.4 µC Notes: 1. L=19.5mH,I AS=7.0A,VDD=50V,RG=25Ω ,starting TJ=25°C; 2. Pulse Test: Pulse width 300ȝs,Duty cycle2%; 3. Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.07.09 Http://www.silan.com.cn Page 3 of 7 NOMENCLATURE TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.07.09 Http://www.silan.com.cn Page 4 of 7 TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.07.09 Http://www.silan.com.cn Page 5 of 7 TYPICAL TEST CIRCUIT 200nF12V 50.ƻ 300nF VGS 3mA VDS VGS 10V Charge Qg Qgs Qgd VDS VGS RG RL VDD 10V VDS VGS 10% 90% td(on) ton tr td(off) toff tf VDS RG VDD 10V L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1 2 LIAS
2 BVDSS
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform DUT DUT DUT
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.07.09 Http://www.silan.com.cn Page 6 of 7 PACKAGE OUTLINE TO2203L(One) UNIT: mm TO2203L(Two) UNIT: mm 6.10~6.80 13.1±0.5 15.1~15.9 3.95MAX
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.07.09 Http://www.silan.com.cn Page 7 of 7 PACKAGE OUTLINE (continued) TO220F3L(One) UNIT: mm A L 12.6~13.8 12.4±0.4 6.70±0.20 TO220F3L(Two) UNIT: mm